PAM XIAMEN offers 2.5″ PBN Heater
2.5″ PBN Heater.
1. Resistance: 22-35 ohm
2. Voltage: 180 V
3. Current: 15 A
4. Power: 2000 W
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2.5″ PBN Heater.
1. Resistance: 22-35 ohm
2. Voltage: 180 V
3. Current: 15 A
4. Power: 2000 W
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 3″ FZ Silicon Wafer Thickness:229-249μm. 3″ Si FZ Diameter 76-76.6mm Thickness 229-249μm Resistivity 39-47Ωcm TTV ≤10μm RRG ≤ 7% about 1.5mil is etched from the surfaces in order to remove any surface damage 1.5mil = 1.5*25.4= 38.1μm 1.1 Wafers are to be [...]
PAM XIAMEN offers Si wafers. Our clients often use the following silicon wafers for the above applications: 100mm P(100) 0-100 ohm-cm SSP 500um Test Grade PDMS micro-fluidic chip platforms for micro-organoid cell culture applications. Microfluidic platform Characterization Definition of a microfluidic platform A microfluidic platform provides a set of fluidic unit operations, which are [...]
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of AlGaP and other related products and services announced the new availability of size 2” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, said, “We are [...]
PAM-XIAMEN can offer InGaSb material substrate, which can be used for InGaSb photodetectors, InGaSb/GaAs quantum dots (QDs), InGaSb-on-insulator for p-MOSFET, and InGaSb/InAs superlattice materials for infrared photodiodes in the very long-wavelength infrared (VLWIR) range It can be grown on GaAs substrate, GaSb (111)A substrate and [...]
PAM-XIAMEN can offer 2” InGaN/GaN quantum well blue laser diode wafer on sapphire or silicon substrate as follows. The blue GaN LD wafer for commercial applications illustrates the great potential of III-V epitaxial wafers. 1. Specification of 440-460nm Blue GaN LD wafer PAM190909-GAN-LD Item Descriptions Materials Substrate blue laser 440-460nm InGaN 2 inch Sapphire substrate*** GaN Blue LD EPI Wafer Spec Spec LD Epitaxial Wafer Size Growth MOCVD Diameter 50.8 ± 0.2 [...]
CdZnTe monocrystalline wafers Xiamen Powerway Advanced Material Co.,Ltd., provide CdZnTe monocrystalline wafers in different size for HgCdTe substrate epitaxy. And now PAM-XIAMEN offer specification as follows: S.No. Parameters Detail 1 Undoped Cd1_xZnxTe Single crystal substrates From wafer to wafer x =0.040± 0.005 On one wafer x =0.040± 0.005 (Twin & micro twins free [...]
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