Blue GaN LD Wafer

Blue GaN LD (Laser Diode) Wafer

We can offer 2” InGaN/GaN quantum well blue LD wafer on sapphire or silicon substrate(PAM-190909-GAN-LD) as follow:

1.Specification of 440-460nm LD wafer:

Item Descriptions Materials Substrate
blue laser 440-460nm InGaN 2 inch Sapphire substrate***
GaN Blue LD EPI Wafer Spec
 EPI Wafer Size
Growth MOCVD
Diameter 50.8 ± 0.2 mm
Thickness 430 ± 30 um
EPI thickness   um
 EPI Wafer Structure
Contact layer p type GaN
Superlattice Cladding Layer p type GaN
Electron Blocking Layer p type AlGaN
Waveguide Layer undoped InGaN
QW and QB layer InGaN and GaN
Waveguide Layer n type InGaN
Cladding Layer n type AlGaN
Substrate Silicon


Remark: GaN laser diode epitaxial structure was grown on top of the xxμm-thick Si-doped GaN layer. The epitaxial blue LD structure consisted of a xxμm-thick n-type Al0.06Ga0.94N cladding layer, an xx-thick n-type In0.04Ga0.96N waveguide layer, two pairs of xxnm-thick undoped In0.15Ga0.85N QW and xx-nm-thick undoped GaN QB layers, a xx-nm-thick undoped In0.035Ga0.965N waveguide layer, a xx-nm-thick p-type Al0.2Ga0.8N electron blocking layer (EBL), xx pairs of 3-nm-thick p-type Al0.14Ga0.86Nand xxnm-thick p-type GaN superlattice cladding layer, and a xxnm-thick p-type GaN contact layer

2.Other Parameters:

nternal Loss:Unknown
IQE: Unknow
Lifetime:xx seconds@CW, >10 hours@pulse mode
Peak Optical Power:xx mW@pulse mode.






Please contact our technology dept to discuss wafer specifications,including other wavelength, dimension, layer thickness and epitaxial design.
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