PAM-XIAMEN can offer 2” InGaN/GaN quantum well blue laser diode wafer on sapphire or silicon substrate as follows. The blue GaN LD wafer for commercial applications illustrates the great potential of III-V epitaxial wafers.
1. Specification of 440-460nm Blue GaN LD wafer
(PAM-190909-GAN-LD)
| Item | Descriptions | Materials | Substrate |
| blue laser | 440-460nm | InGaN | 2 inch Sapphire substrate*** |
| GaN Blue LD EPI Wafer Spec | |||
| Spec | |||
| LD Epitaxial Wafer Size | |||
| Growth | MOCVD | ||
| Diameter | 50.8 ± 0.2 mm | ||
| Thickness | 430 ± 30 um | ||
| EPI thickness | um | ||
| EPI Wafer Structure | |||
| Contact layer | p type GaN | ||
| Superlattice Cladding Layer | p type GaN | ||
| Electron Blocking Layer | p type AlGaN | ||
| Waveguide Layer | undoped InGaN | ||
| QW and QB layer | InGaN and GaN | ||
| Waveguide Layer | n type InGaN | ||
| Cladding Layer | n type AlGaN | ||
| Substrate | Silicon | ||
2. Structure of Blue Laser Diode Epitaxial Wafer
PAM-190130-LD
| substrates | t (nm) | Composition | Doping | |||
| Al% | ln% | [Si] | [Mg] | |||
| uGaN | 2000-3000 | – | – | – | ||
| nGaN | – | – | – | – | – | |
| AlGaN | – | 6-10 | – | – | – | |
| lnGaN | – | – | – | – | – | |
| MQW (2pairs) |
lnGaN-QW | ~2.5 | – | – | – | – |
| GaN-QB | – | – | – | – | – | |
| lnGaN | – | – | 1-2 | – | – | |
| AlGaN | – | – | 1.OE+19 | |||
| pGaN | – | – | – | – | – | |
| Contact layer | 5 | – | – | – | – | |
Remark: GaN laser diode epitaxial structure is grown on top of the xxμm-thick Si-doped GaN layer. The epitaxial LD wafer structure consisted of a xxμm-thick n-type Al0.06Ga0.94N cladding layer, an xx-thick n-type In0.04Ga0.96N waveguide layer, two pairs of xxnm-thick undoped In0.15Ga0.85N QW and xx-nm-thick undoped GaN QB layers, a xx-nm-thick undoped In0.035Ga0.965N waveguide layer, a xx-nm-thick p-type Al0.2Ga0.8N electron blocking layer (EBL), xx pairs of 3-nm-thick p-type Al0.14Ga0.86Nand xxnm-thick p-type GaN superlattice cladding layer, and a xxnm-thick p-type GaN contact layer.
3. Other Parameters
nternal Loss：Unknown
IQE: Unknow
Lifetime：xx [email protected], >10 [email protected] mode
Peak Optical Power：xx [email protected] mode.
The laser diode wafer process on silicon substrate is mainly by MOCVD method.
Please contact our technology dept to discuss blue GaN LD wafer specifications,including other wavelength, dimension, layer thickness and epitaxial design.
For more information, please contact us email at [email protected] and [email protected].