Blue GaN LD (Laser Diode) Wafer
We can offer 2” InGaN/GaN quantum well blue LD wafer on sapphire or silicon substrate(PAM-190909-GAN-LD) as follow:
1.Specification of 440-460nm LD wafer:
| Item | Descriptions | Materials | Substrate |
| blue laser | 440-460nm | InGaN | 2 inch Sapphire substrate*** |
| GaN Blue LD EPI Wafer Spec | |||
| Spec | |||
| EPI Wafer Size | |||
| Growth | MOCVD | ||
| Diameter | 50.8 ± 0.2 mm | ||
| Thickness | 430 ± 30 um | ||
| EPI thickness | um | ||
| EPI Wafer Structure | |||
| Contact layer | p type GaN | ||
| Superlattice Cladding Layer | p type GaN | ||
| Electron Blocking Layer | p type AlGaN | ||
| Waveguide Layer | undoped InGaN | ||
| QW and QB layer | InGaN and GaN | ||
| Waveguide Layer | n type InGaN | ||
| Cladding Layer | n type AlGaN | ||
| Substrate | Silicon | ||
Remark: GaN laser diode epitaxial structure was grown on top of the xxμm-thick Si-doped GaN layer. The epitaxial blue LD structure consisted of a xxμm-thick n-type Al0.06Ga0.94N cladding layer, an xx-thick n-type In0.04Ga0.96N waveguide layer, two pairs of xxnm-thick undoped In0.15Ga0.85N QW and xx-nm-thick undoped GaN QB layers, a xx-nm-thick undoped In0.035Ga0.965N waveguide layer, a xx-nm-thick p-type Al0.2Ga0.8N electron blocking layer (EBL), xx pairs of 3-nm-thick p-type Al0.14Ga0.86Nand xxnm-thick p-type GaN superlattice cladding layer, and a xxnm-thick p-type GaN contact layer
2.Other Parameters:
nternal Loss：Unknown
IQE: Unknow
Lifetime：xx seconds@CW, >10 hours@pulse mode
Peak Optical Power：xx mW@pulse mode.
Please contact our technology dept to discuss wafer specifications,including other wavelength, dimension, layer thickness and epitaxial design.
and send us email at victorchan@powerwaywafer.com