Blue GaN LD Wafer

Blue GaN LD Wafer

PAM-XIAMEN can offer 2” InGaN/GaN quantum well blue laser diode wafer on sapphire or silicon substrate as follows. The blue GaN LD wafer for commercial applications illustrates the great potential of III-V epitaxial wafers.

1. Specification of 440-460nm Blue GaN LD wafer 


Item Descriptions Materials Substrate
blue laser 440-460nm InGaN 2 inch Sapphire substrate***
GaN Blue LD EPI Wafer Spec
LD Epitaxial Wafer Size
Growth MOCVD
Diameter 50.8 ± 0.2 mm
Thickness 430 ± 30 um
EPI thickness   um
 EPI Wafer Structure
Contact layer p type GaN
Superlattice Cladding Layer p type GaN
Electron Blocking Layer p type AlGaN
Waveguide Layer undoped InGaN
QW and QB layer InGaN and GaN
Waveguide Layer n type InGaN
Cladding Layer n type AlGaN
Substrate Silicon


2. Structure of Blue Laser Diode Epitaxial Wafer


substrates t (nm) Composition Doping
Al% ln% [Si] [Mg]
uGaN 2000-3000
AlGaN 6-10
lnGaN-QW ~2.5
lnGaN 1-2
AlGaN 1.OE+19
Contact layer 5


3. GaN based Laser Diode Epitaxial Wafer, Blue Emission


Epitaxial Blue LD Structure with Emission Wavelength of 440~460nm

Layer Name Material Thickness
Contact Layer p-type GaN 30nm
Superlattice Cladding Layer (80~150 pairs) p-type GaN
p-type AlxxGaxxN
Electron Blocking Layer (EBL) p-type Al0.2Ga0.8N
Waveguide Layer undoped In0.035Ga0.965N
MQW (xx pairs) undoped GaN QB
InxxGaxxN QW
Waveguide Layer n-type InxxGaxxN  –
Cladding Layer n-type Al0.6Ga0.94N 1.4um
Substrate Silicon  

4. Other Parameters

nternal Loss:Unknown
IQE: Unknow
Lifetime:xx seconds@CW, >10 hours@pulse mode
Peak Optical Power:xx mW@pulse mode.

The laser diode wafer process on silicon substrate is mainly by MOCVD method.






Please contact our technology dept to discuss blue GaN LD wafer specifications,including other wavelength, dimension, layer thickness and epitaxial design.


For more information, please contact us email at and


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