CdZnTe monocrystalline wafers

CdZnTe monocrystalline wafers

 

 

Xiamen Powerway Advanced Material Co.,Ltd., provide CdZnTe monocrystalline wafers in different size for HgCdTe substrate epitaxy.  And now PAM-XIAMEN offer specification as follows:

 

 

 

S.No. Parameters  Detail
1 Undoped Cd1_xZnxTe Single crystal substrates From wafer to wafer x =0.040± 0.005
On one wafer x =0.040± 0.005
(Twin & micro twins free substrates)
2 Substrates Sizes & Quantity 15mm X 15mm ± 0.05 mm, Quantity –60 Nos.
25mm X 25mm ± 0.05 mm, Quantity –30 Nos
30mm X 30mm ± 0.05 mm, Quantity –30 Nos
Parallelism <=3 arc minutes
3 Substrate Thickness 1mm ± 10 ~m
Flatness of B Face < 5 um
4 Surface polishing A & B Face Chemo-mechanically polished
Mechanically & Chemically B Face Epi-ready with roughness (Ra) < 2nm
  (mirror polished surface-Ready to use for MBE Growth)
5 Face Identification Mark on “A” Face
(All wafers shall be well identified for the A-face)
6 IR Transmission % > 60% in 2 to 25 iJm wavelength range
7 Substrate Surface Orientation ’(211)
8 Orientation Accuracy < ± 0.25°
9 Average Etch Pit density <= 1X10^5cm2(no cellular structure)
10 X-ray DCRC FWHM < 18 arc sec
11 X-ray DCRC FWHM peak shift from one end of the wafer to other end < 30 arc sec
12 Tellurium Precipitatellnclusion Free of Tellurium precipitatellnclusion larger than 2 um (Te ppt density <1 04/cm2 )

 

For more information, please visit our website:www.powerwaywafer.com, send us email at sales@powerwaywafer.com  or powerwaymaterial@gmail.com

 

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