CdZnTe monocrystalline wafers

CdZnTe monocrystalline wafers

CdZnTe monocrystalline wafers

 

 

Xiamen Powerway Advanced Material Co.,Ltd., provide CdZnTe monocrystalline wafers in different size for HgCdTe substrate epitaxy.  And now PAM-XIAMEN offer specification as follows:

 

 

 

S.No.Parameters Detail
1Undoped Cd1_xZnxTe Single crystal substratesFrom wafer to wafer x =0.040± 0.005
On one wafer x =0.040± 0.005
(Twin & micro twins free substrates)
2Substrates Sizes & Quantity15mm X 15mm ± 0.05 mm, Quantity –60 Nos.
25mm X 25mm ± 0.05 mm, Quantity –30 Nos
30mm X 30mm ± 0.05 mm, Quantity –30 Nos
Parallelism<=3 arc minutes
3Substrate Thickness1mm ± 10 ~m
Flatness of B Face< 5 um
4Surface polishingA & B Face Chemo-mechanically polished
Mechanically & ChemicallyB Face Epi-ready with roughness (Ra) < 2nm
 (mirror polished surface-Ready to use for MBE Growth)
5Face IdentificationMark on “A” Face
(All wafers shall be well identified for the A-face)
6IR Transmission %> 60% in 2 to 25 iJm wavelength range
7Substrate Surface Orientation’(211)
8Orientation Accuracy< ± 0.25°
9Average Etch Pit density<= 1X10^5cm2(no cellular structure)
10X-ray DCRC FWHM< 18 arc sec
11X-ray DCRC FWHM peak shift from one end of the wafer to other end< 30 arc sec
12Tellurium PrecipitatellnclusionFree of Tellurium precipitatellnclusion larger than 2 um (Te ppt density <1 04/cm2 )

 

For more information, please visit our website:www.powerwaywafer.com, send us email at [email protected]  or [email protected]

 

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