PAM XIAMEN offers 2″ Prime Silicon Wafer Tnickness 675 +/- 20 microns.
2 inch in diameter wafers
Monocrystalline silicon with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 microns,
Warping <35 microns
For more information, please visit our website: [...]
2019-07-01meta-author
Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, today announces availability of InGaN substrate materials. InGaN is the key compound semiconductor material used for the fabrication of blue, green, and white light emitting diodes (LEDs),GaN-based [...]
2012-12-04meta-author
PAM XIAMEN offers GaAs(100) Cr-doped crystal.
GaAs , Growing Method: VGF(100) Cr- doped, SI-type, 2″ dia x 0.35mm, 2sp
GaAs single crystal wafer
Growing Method: VGF
Orientation: [...]
2019-04-22meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
4″
300
P/P
5-10
SEMI Test, Scratched and unsealed. Can be re-polished for extra fee
p-type Si:B
[100]
4″
380
P/E
5-10
SEMI TEST (in Opened cassette), 2Flats
p-type Si:B
[100]
4″
380
P/E
5-10
SEMI Prime
p-type Si:B
[100]
4″
380
P/E
5-10
SEMI TEST (with bad surface)
p-type Si:B
[100]
4″
380
P/E
5-10
SEMI Prime, hard cst, Back-side slightly darker than normal
p-type Si:B
[100]
4″
380
P/E
5-10
SEMI Test, Dirty wafers, can be cleaned for extra fee
p-type Si:B
[100]
4″
380
BROKEN
5-10
Broken P/E Wafers, [...]
2019-03-05meta-author
The hetero epitaxial materials used to make quantum cascade laser (QCL) are mainly InP based GaInAs/AlInAs material system, GaAs based GaAs/AlGaAs material system and antimonide material system. PAM-XIAMEN can provide InP based quantum cascade lasers thin film, as follows:
1. InGaAs/InAlAs/InP for Quantum Cascade Laser Diode
PAM210906 [...]
2023-07-21meta-author
PAM-H01 series are CZT crystal based hemispherical detectors which have a special structure. They can detect X-ray and middle to high energy γ-ray in a high energy resolution.
CZT Asymmetry Detector
1. CZT High Energy Resolution Detector Specification
Material
CdZnTe
Density
5.8g/cm3
Volume resistance
>1010Ω.cm
Dimensions
5.0×5.0mm2
10.0×10.0mm2
Thickness
2.50mm
5.0mm
Electrode material
Au
Operation temperature
0℃-+40℃ (standard)/ -20℃-+40℃ (customized)
Operation voltage
≤900V
Energy range
10KeV~2.6MeV
Energy resolution(22℃)
<2.5%@662MeV
Peak-compton ratio
>3
Storage temperture
10℃~40℃
Storage humidity
20%-80%
Remarks
Customized [...]
2019-04-24meta-author