PAM XIAMEN offers 4″ FZ N type Si wafer, which can be used for research on silicon quantum devices.
GQ23b Silicon wafers, per SEMI Prime, P/P
4″Ø×525±10μm,
FZ n-type Si:P
[100]±0.5°,
Ro=(7,000-10,000)Ohmcm,
TTV<5μm, Bow<30μm, Warp<30μm,
Both-sides-polished,
SEMI Flat one: Length 32.5±2mm @ 110,
Sealed in Empak or equivalent cassette,
MCC Lifetime>1,000μs.
For more information, [...]
2021-03-19meta-author
PAM-XIAMEN can offer 780nm laser diode wafer with quantum well based on GaAs substrate. The semiconductor lasers fabricated our LD wafer are applied in the fields of laser cutting, laser coating, laser medical treatment, optical communication, infrared security and etc., which have the disadvantages [...]
2016-06-13meta-author
Welcome to our Semiconductor Wafer Maker Member – Xiamen Powerway Advanced Material Co.,Ltd
Powerway wafer develops and manufactures wafers with Gallium Arsenide (GaAs), Gallium Nitride (GaN) technologies advanced high-performance RF solutions for customers worldwide. We are a leading semiconductor wafer in market serving customers in mobile devices,3G and 4G base station,WLAN,WiMAX,GPS,defense and aerospace markets. We have GaAs [...]
2012-06-20meta-author
PAM XIAMEN offers 12 inch Si dummy wafer:
Surface:double side polished;
Thickness ≥750um;
V Notch(SEMI STD);
Slight scratch (with no stains or heavy/deep scratches);
About the Si dummy wafer
According to different application scenarios in the fab, silicon wafers can be divided into two categories:
1.Prime Wafer, which is directly used for [...]
2021-04-22meta-author
PAM XIAMEN offers 6″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
6″
350
P/P
FZ 2,700-3,250
SEMI Prime, 1Flat (57.5mm)
p-type Si:B
[100]
6″
900
C/C
FZ >50
SEMI Prime, 1Flat, MCC Lifetime>6,000μs
n-type Si:P
[100]
6″
825
C/C
FZ 7,000-8,000 {7,025-7,856}
SEMI, 1Flat, Lifetime=7,562μs
n-type Si:P
[100-6° towards[111]] ±0.5°
6″
675
P/P
FZ >3,500
SEMI Prime, 1Flat (57.5mm)
n-type Si:P
[100-6° towards[111]] ±0.5°
6″
790 ±10
C/C
FZ >3,500
SEMI, 1Flat
n-type Si:P
[100-6° towards[111]] ±0.5°
6″
675
P/P
FZ >1,000
SEMI Prime, Notch on <010> {not on <011>}, Laser Mark
n-type Si:P
[100-6° towards[111]] ±0.5°
6″
675
BROKEN
FZ >1,000
SEMI notch Test, Broken into many large pieces. One piece [...]
2019-03-04meta-author
A commercially viable GaN LED was an incredibly hard nut to crack that required the development of a buffer layer and a novel approach to p-type doping. But 20 years ago it all came together. Richard Stevenson looks back at the device’s birth. (more…)
2012-03-06meta-author