6″ Silicon Wafer-1

6″ Silicon Wafer-1

PAM XIAMEN offers 6″ Silicon Wafer.

MaterialOrient.Diam.Thck
(μm)
Surf.Resistivity
Ωcm
Comment
p-type Si:B[100]6″350P/PFZ 2,700-3,250SEMI Prime, 1Flat (57.5mm)
p-type Si:B[100]6″900C/CFZ >50SEMI Prime, 1Flat, MCC Lifetime>6,000μs
n-type Si:P[100]6″825C/CFZ 7,000-8,000 {7,025-7,856}SEMI, 1Flat, Lifetime=7,562μs
n-type Si:P[100-6° towards[111]] ±0.5°6″675P/PFZ >3,500SEMI Prime, 1Flat (57.5mm)
n-type Si:P[100-6° towards[111]] ±0.5°6″790 ±10C/CFZ >3,500SEMI, 1Flat
n-type Si:P[100-6° towards[111]] ±0.5°6″675P/PFZ >1,000SEMI Prime, Notch on <010> {not on <011>}, Laser Mark
n-type Si:P[100-6° towards[111]] ±0.5°6″675BROKENFZ >1,000SEMI notch Test, Broken into many large pieces. One piece ~50% of wafers other pieces ~20% of wafer
n-type Si:P[100]6″500 ±10P/PFZ 60-75SEMI Prime, 1Flat, MCC Lifetime>14,980μs, Lasermark
n-type Si:P[100]6″725P/PFZ 50-70 {57-62}SEMI Prime, 1Flat (57.5mm), Lifetime=15,799μs
n-type Si:P[100]6″1,300 ±10E/EFZ 0.01-0.05SEMI notch
n-type Si:P[111] ±0.5°6″300 ±15BROKENFZ >6,000Test,Broken into a dozen large pieces ranging from 65% of wafer to 5% and small pieces as well
n-type Si:P[112-5.0° towards[11-1]] ±0.5°6″875 ±10E/EFZ >3,000SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips
n-type Si:P[112-5° towards[11-1]] ±0.5°6″1,000 ±10C/CFZ >3,000SEMI, 1 JEIDA Flat (47.5mm), TTV<4μm, Lifetime>1,000μs
Intrinsic Si:-[100]6″625 ±15P/PFZ >20,000SEMI Prime, 1Flat (57.5mm)
Intrinsic Si:-[111] ±0.5°6″750E/EFZ >10,000SEMI notch, TEST (defects, cannot be polished out)
p-type Si:B[110] ±0.5°6″390 ±10C/C>102Flats
p-type Si:B[110]6″675P/E0.01-0.02Prime, PFlat @ [111]±0.25°, SF @ [111]±5° 109.5° CW from PF
p-type Si:B[100]6″675P/E50-150SEMI Prime, 1Flat (57.5mm)
p-type Si:B[100]6″1000P/P10-15SEMI Prime, 1Flat (57.5mm), 4 Prime wafers plus 2 scratched wafers at no cost
p-type Si:B[100]6″675P/E5-10SEMI Prime, 1Flat (57.5mm)
p-type Si:B[100]6″1000P/E5-10SEMI Prime, 1Flat (57.5mm)
p-type Si:B[100-9.7° towards[001]] ±0.1°6″525P/P1-100SEMI Prime, 1Flat (57.5mm) at <110>±0.1º
p-type Si:B[100]6″675P/P1-30SEMI Prime, 1Flat, Soft cst
p-type Si:B[100-6° towards[111]] ±0.5°6″675P/E1-5SEMI Prime, 1Flat (57.5mm)

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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