6″ Silicon Wafer-1

PAM XIAMEN offers 6″ Silicon Wafer.

Material Orient. Diam. Thck
(μm)
Surf. Resistivity
Ωcm
Comment
p-type Si:B [100] 6″ 350 P/P FZ 2,700-3,250 SEMI Prime, 1Flat (57.5mm)
p-type Si:B [100] 6″ 900 C/C FZ >50 SEMI Prime, 1Flat, MCC Lifetime>6,000μs
n-type Si:P [100] 6″ 825 C/C FZ 7,000-8,000 {7,025-7,856} SEMI, 1Flat, Lifetime=7,562μs
n-type Si:P [100-6° towards[111]] ±0.5° 6″ 675 P/P FZ >3,500 SEMI Prime, 1Flat (57.5mm)
n-type Si:P [100-6° towards[111]] ±0.5° 6″ 790 ±10 C/C FZ >3,500 SEMI, 1Flat
n-type Si:P [100-6° towards[111]] ±0.5° 6″ 675 P/P FZ >1,000 SEMI Prime, Notch on <010> {not on <011>}, Laser Mark
n-type Si:P [100-6° towards[111]] ±0.5° 6″ 675 BROKEN FZ >1,000 SEMI notch Test, Broken into many large pieces. One piece ~50% of wafers other pieces ~20% of wafer
n-type Si:P [100] 6″ 500 ±10 P/P FZ 60-75 SEMI Prime, 1Flat, MCC Lifetime>14,980μs, Lasermark
n-type Si:P [100] 6″ 725 P/P FZ 50-70 {57-62} SEMI Prime, 1Flat (57.5mm), Lifetime=15,799μs
n-type Si:P [100] 6″ 1,300 ±10 E/E FZ 0.01-0.05 SEMI notch
n-type Si:P [111] ±0.5° 6″ 300 ±15 BROKEN FZ >6,000 Test,Broken into a dozen large pieces ranging from 65% of wafer to 5% and small pieces as well
n-type Si:P [112-5.0° towards[11-1]] ±0.5° 6″ 875 ±10 E/E FZ >3,000 SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips
n-type Si:P [112-5° towards[11-1]] ±0.5° 6″ 1,000 ±10 C/C FZ >3,000 SEMI, 1 JEIDA Flat (47.5mm), TTV<4μm, Lifetime>1,000μs
Intrinsic Si:- [100] 6″ 625 ±15 P/P FZ >20,000 SEMI Prime, 1Flat (57.5mm)
Intrinsic Si:- [111] ±0.5° 6″ 750 E/E FZ >10,000 SEMI notch, TEST (defects, cannot be polished out)
p-type Si:B [110] ±0.5° 6″ 390 ±10 C/C >10 2Flats
p-type Si:B [110] 6″ 675 P/E 0.01-0.02 Prime, PFlat @ [111]±0.25°, SF @ [111]±5° 109.5° CW from PF
p-type Si:B [100] 6″ 675 P/E 50-150 SEMI Prime, 1Flat (57.5mm)
p-type Si:B [100] 6″ 1000 P/P 10-15 SEMI Prime, 1Flat (57.5mm), 4 Prime wafers plus 2 scratched wafers at no cost
p-type Si:B [100] 6″ 675 P/E 5-10 SEMI Prime, 1Flat (57.5mm)
p-type Si:B [100] 6″ 1000 P/E 5-10 SEMI Prime, 1Flat (57.5mm)
p-type Si:B [100-9.7° towards[001]] ±0.1° 6″ 525 P/P 1-100 SEMI Prime, 1Flat (57.5mm) at <110>±0.1º
p-type Si:B [100] 6″ 675 P/P 1-30 SEMI Prime, 1Flat, Soft cst
p-type Si:B [100-6° towards[111]] ±0.5° 6″ 675 P/E 1-5 SEMI Prime, 1Flat (57.5mm)

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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