AlN (aluminum nitride) is a covalent bond compound with a hexagonal wurtzite structure. Usually gray or grayish white in color, it has advantages such as high thermal conductivity, high-temperature insulation, good dielectric properties, high material strength at high temperatures, and low coefficient of thermal [...]
2024-03-13meta-author
PAM XIAMEN offers 6″FZ Prime Silicon Wafer-3
6″ FZ Si wafer, 75pcs
Orientation: (100)±0.5
Type/Dopant: n/phosphorus
Resistivity: 1-5 Ω-cm
Life time : > 1000 μs
Thickness: 400 ± 25 μm
Carbon (atm/cm3): <2.0 x 1016
Oxygen (atm/cm3): < 2 x 1016
Diameter: 150 mm
Primary flat: Semi Std
Secondary flat: not essential
Front and back side Finish: [...]
2020-04-23meta-author
PAM XIAMEN offers Float Zone Silicon Wafers, they use FZ Silicon substrates instead of Czochralski grown silicon.
Or simply put, Float Zone Si is most ly used low volume applications that require high-efficiency while CZ Silicon is used for high volume, less expensive applications.
1. Specifications [...]
2019-02-14meta-author
PAM XIAMEN offers3″ Silicon Wafer-15
3″ Si wafer(32825), R≤200Ωcm
1. Diameter: 76.2 ± 0.1mm
2. The type of alloying: P/type boron
3. Orientation (111) ±0.5º
4. Disorientation 4°±0.5º to <110> direction
5. Resistivity: ≤150Ωcm
6. Primary surface: semi std
7. Secondary surface: none
8. Thickness: 380±25μm
9. Overall thickness variation on the plate is [...]
2019-11-13meta-author
When talking about the topic that step growth reduces silicon carbide defects, it is necessary to discuss the process for the growth of silicon carbide single crystals. Gas-solid phase transitions are involved in the growth process of silicon carbide single crystals by PVT or HTCVD method. Therefore, there [...]
2021-04-12meta-author
PAM XIAMEN offers 905nm laser diode wafers.
1. Specs of 905nm Laser Diode Wafer
1.1 Three Stark 905nm Pulse LD Structures PAM211202-GAINAS
Layer
Composition
Thickness
Concentration
13
P+ GaAs
/
/
12
P-AlGaAs cladding + waveguide
d~1.6um
/
11
Undoped GaInAs QW PL:880~900nm
/
/
10
N- AlGaAs cladding + waveguide
/
9
N++ GaAs/P++ GaAs Tunnel junction
/
/
8
P- AlGaAs cladding + waveguide
/
7
Undoped GaInAs QW PL:880~900nm
/
/
6
N- AlGaAs cladding [...]
2019-03-13meta-author