PAM XIAMEN offers 12″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
12″
750
P/E
MCZ 1-100
TEST grade, SEMI notch, TTV<25µm
p-type Si:B
[100]
12″
775
P/P
MCZ 1-100
Prime, SEMI notch, TTV<3µm
p-type Si:B
[100]
12″
775
P/E
MCZ 1-100
Prime, SEMI notch,TTV<10µm
p-type Si:B
[100]
12″
775
P/P
0.01-0.02
Prime, SEMI notch,TTV<4µm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading [...]
2019-03-04meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
6
SSP
Boron
P+
100
57,5 ± 2,5
100 ± 1
0.0 ± 5.0 °
0.001 – 100 Ohmcm
150 ± 0.5 mm
675 ± 200 µm
100
20
100
6
SSP
Boron
P
100
57,5 ± 2,5
110 ± 0,50
0.0 ± 0.5 °
> [...]
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Silicon epitaxy with Boron dopant in size 200mm from PAM-XIAMEN is available for semiconductor device fabrication. Silicon epitaxy growth is a surface treatment process for silicon wafers, which means that a single crystal film is superimposed on the polished wafer by chemical reaction or other [...]
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