GaAs (gallim arsenide) epitaxial wafer with specific growth for high voltage (HV) diode stacks can be provided by PAM-XIAMEN. Gallium arsenide structure provides required power density, efficiency and reliability for extremely compact systems. GaAs diode wafers meet the requirements for power electronics in modern [...]
2022-01-28meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
6
DSP
Boron
P
100
0,0 ± 0,0
110 ± 0,20
0.0 ± 0.1 °
1 – 20 Ohmcm
150.0 ± 0.2 mm
675 ± 5 µm
60
3
6
DSP
Boron
P
100
57,5 ± 2,5
110 ± 0,50
0.0 ± 0.5°
30 – [...]
2019-02-25meta-author
The growth of p-type GaAs nanowires (NWs) on GaAs (111) B substrates by metal-organic chemical vapor deposition (MOCVD) has been systematically investigated as a function of diethyl zinc (DEZn) flow. The growth rate of GaAs NWs was slightly improved by Zn-doping and kink is [...]
2020-02-11meta-author
High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy
A low-dislocation-density thick GaN layer was successfully grown using selective-area HVPE growth combined with epitaxial lateral overgrowth. The InGaN MQWsfabricated on this thick GaN layer showed superior optical properties compared with that on [...]
2013-05-02meta-author
PAM XIAMEN offers 4″ FZ Intrinsic Si wafer
SEMI-PRIME, FZ, 4″, Intrinsic/Undoped, <1-0-0>, >10,000 ohm-cm, 500±15um, SSP, TTV<5um, Bow<30um, Warp <30um,
Flats: 1 Flat.
Particle @0.3µm, <20count
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-18meta-author
Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etching
The bowing curvature of the free-standing GaN substrate significantly decreased almost linearly from 0.67 to 0.056 m−1 (i.e. the bowing radius increased from 1.5 to 17.8 m) with increase in [...]