3-11. Particles
Particles have the appearance of eyes and if present are usually concentrated at the wafer edges and not within the speci ed area. If present, count once per occurrence.Two particles within 200 microns count as one.
2018-06-28meta-author
5-5 SiC Device Fundamentals
To minimize the development and production costs of SiC electronics, it is important that SiC device fabrication takes advantage of existing silicon and GaAs wafer processing infrastructure as much as possible. As will be discussed in this section, most of the [...]
2018-06-28meta-author
2-29.Resistivity
The resistance to current flow and movement of electron and hole carries in the silicon carbide. Resistivity is related to the ratio of voltage across the silicon to the current flowing through the silicon carbide per unit volume of silicon carbide. The units for [...]
2018-06-28meta-author
2-7.Primary Flat Orientation
The at of the longest length on the wafer, oriented such that the chord is parallel with a specied low index crystal plane. Measured on one wafer per ingot using Laue back-reection technique with manual angle measurement.
2018-06-28meta-author
In solid state physics, a band gap, also called an energy gap or bandgap, is an energy range in a solid where no electron states can exist. In graphs of the electronic band structure of solids, the band gap generally refers to the energy [...]
2018-06-28meta-author
3-8. 3C Inclusions
Regions where step- ow was interrupted during epi layer growth. Typical regions are generally triangular although more rounded shapes are sometimes seen. Count once per occurrence. Two inclusions within 200 microns count as one.
2018-06-28meta-author