Q: After MOCVD, do you anneal the wafer for p-GaN activation?
A:Yes! We will anneal the wafer for p-GaN activation
Q: After MOCVD, do you anneal the wafer for p-GaN activation?
A:Yes! We will anneal the wafer for p-GaN activation
Q:What atomic ratio for Si/C in SiC ? A:Atomic ratio for Si/C in SiC is 1:1
Q: For blue wafer epi on flat substrate, it would be important to omit / leave out the u-GaN layer as we want to LLO and backside conacting. Is that possible? A:Yes, it is no problem, some clients bought our wafers for LLO.
Q: Regarding blue LED epi wafer, after MOCVD, do you anneal the wafer for p-GaN activation? A:Yes!
Q: I am not sure whether practically LLO can be done on the PSS given it is not a flat surface A: “laser lift-off” actually is according to “NL layer” as below image. If the NL layer is GaN layer, when it is heating to constant high [...]
Q:For Si-doped GaN, what are the resistivity and mobility? A:Mobility:150-200Resistivity<0.05ohm.cm,
Q: SiC wafer reclaim, can you gurantee surface roughness<=0.3nm? A: Sure, no problem
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