Calcite for sale is a negative uniaxial crystal that has high birefringence, wide spectral transmission and availability in reasonably sized rhombs. It’s good material used as visible and near IR polarizers and retardation plate. CaCO3 is the chemical formula for the mineral. PAM XIAMEN [...]
2019-04-17meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211] ±0.5°
3″
1016
P/P
FZ 25-75
Prime
n-type Si:P
[211] ±0.5°
3″
1016
P/P
FZ 25-75
Prime
n-type Si:P
[211] ±0.5°
3″
1016
P/P
FZ 25-75
SEMI TESt
n-type Si:P
[111] ±0.5°
3″
415 ±15
E/E
FZ 10,000-12,000
SEMI Prime, Lifetime>1,500μs
n-type Si:P
[111] ±0.5°
3″
415 ±15
BROKEN
FZ 10,000-12,000
Broken E/E wafers, in two pieces, Lifetime>1,500μs,
n-type Si:P
[111] ±0.5°
3″
2500
C/C
FZ 7,000-13,000
SEMI, Individual cst
n-type Si:P
[111] ±0.5°
3″
370
P/E
FZ >5,000
SEMI [...]
2019-03-06meta-author
The realization of low-dislocation-density bulk GaN crystals is necessary for use in the fabrication of future high-power devices with low power consumption. In this study, we attempted the regrowth of low-dislocation-density (104–105 cm−2) GaN substrates to fabricate thick and low-dislocation-density GaN crystals using the dipping [...]
2019-11-18meta-author
PAM-XIAMEN offers (11-22) Plane Si-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(11-22)- SI
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(11-22) plane off angle toward A-axis 0 ±0.5°
(11-22) plane off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
> 106 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
PAM XIAMEN offers6″ CZ Prime Wafer 1
6 inch Prime CZ-Si wafer 6 inch (+/- 0.5 mm), thickness = 200 ± 25 µm,
orientation (100)(+/-0.5°),
2-side polished,
p or n type (no matter) ,
? Ohm cm (no matter),
Particle: 0.5μm, <qty300
ttv ≤ 10um,warp ≤30um
One side sputtering Cr/Au Layer with [...]
2019-09-20meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
100
P
Boron
CZ
-100
1-20
43768
P/P
PRIME
100
P
Boron
CZ
-100
1-20
40-60
P/P
PRIME
100
P
Boron
CZ
-100
1-20
80-100
P/P
PRIME
100
P
Boron
CZ
-100
1-20
180-200
P/P
PRIME
100
P
Boron
CZ
-100
1-20
300-350
P/E
PRIME
100
P
Boron
CZ
-100
1-20
300-350
P/P
PRIME
100
P
Boron
CZ
-100
1-20
350-400
P/P
PRIME
100
P
Boron
CZ
-100
1-20
375-425
P/E
PRIME
100
P
Boron
CZ
-100
.001-.005
450-500
P/P
PRIME
100
P
Boron
CZ
-100
.005-.02
450-500
P/P
PRIME
100
P
Boron
FZ
-100
>3000
450-500
P/P
PRIME
100
P
Boron
CZ
-100
1-20
450-500
P/P
PRIME
100
P
Boron
CZ
-100
.001-.005
500-550
P/E
PRIME
100
P
Boron
CZ
-100
.005-.02
500-550
P/E
PRIME
100
P
Boron
FZ
-100
>3000
500-550
P/E
PRIME
100
P
Boron
CZ
-100
1-20
500-550
P/E
PRIME
100
P
Boron
CZ
-100
1-20
500-550
P/E/DTOx
PRIME
100
P
Boron
CZ
-100
1-20
500-550
P/E/Ni
PRIME
100
P
Boron
CZ
-100
1-20
500-550
P/E/WTOx
100
P
Boron
CZ
-100
1-20
950-1050
P/E
PRIME
100
P
Boron
CZ
-100
1-20
950-1050
P/P
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
2019-03-04meta-author