PAM XIAMEN offers 6″ Prime EPI Wafer.
6″ EPI Wafer
diameter: 6″ (150 +-0,5 mm)
orientation: <100>
primary flat length: 57.5mm+/-2.5mm
primary flat: <110> +/- 1
no secondary flat
overall thickness 280-325μm
TTV <10um
WARP/BOW <50um
TIR <3um
EPI layer:
-type: n
-dopant: P [...]
2019-07-03meta-author
Properties of InGaN blue laser diodes grown on bulk GaN substrates
High-pressure growth from solution is at present the only method able to provide true bulk GaN monocrystals. In this paper, we would like to demonstrate that in spite of their small, centimeter range size, [...]
PAM XIAMEN offers Niobium( Nb) substrate ( Polycrystalline).
Niobium( Nb) substrate ( Polycrystalline) , 10x10x0.5 mm, 1 side polished
Niobium( Nb) substrate ( Polycrystalline)
Purity: 99.5%
Size: 10x10x0.5 mm
Surface finish: One side optical polished
Surface finish (RMS or Ra) : N/A
General Properties [...]
2019-05-08meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111] ±0.5°
3″
415 ±15
E/E
FZ 2,000-5,000
SEMI Prime, Lifetime>1,500μs
n-type Si:P
[111] ±1°
3″
508
E/E
FZ 182-196
SEMI Test, TTV<3μm
Intrinsic Si:-
[100]
3″
300
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
300
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
380
P/E
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
380
P/E
FZ >20,000
SEMI Test, unpolished side has stain
Intrinsic Si:-
[100]
3″
380
P/E
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
500
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
500
P/P
FZ >20,000
SEMI Prime, Front Side Prime, back side Test
Intrinsic Si:-
[100]
3″
650
P/P
FZ >10,000
SEMI Prime, with LM, TTV<2μm
Intrinsic Si:-
[100]
3″
700
P/P
FZ >10,000
Test, scratrches and stains. [...]
2019-03-06meta-author
Unusual defects, generated by wafer sawing: Diagnosis, mechanisms and how to distinguish from related failures
In the wafer sawing process, unusual failures were observed and their root causes have been investigated. Besides classical and well-known failures, the following failure mechanisms were found. Surface-ESD (ESDFOS), caused [...]
Side view microphotograph of an electrode slice, depicting the structure of a nanowall/silicon/nanowall. Credit: Victor Krivchenko
Members of the D. V. Skobeltsyn Institute of Nuclear Physic and colleagues from the Faculty of Chemistry of the Lomonosov Moscow State University have developed a new silicon- and [...]
2017-09-18meta-author