PAM XIAMEN offers high-quality Ag — Silver Single Crystal & Substrate.
PAM XIAMEN grows Silver single crystal along <111> direction up to 20 mm diameter by Modified Bridgeman method. The silver single crystal substrate is cut from the Ag ingot and polished to 30A [...]
2019-04-16meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[110]
2″
250
P/E
FZ ~50
PF<111> SF 134°
n-type Si:P
[110]
2″
900
P/E
FZ 50-100
1 F @ <111> only
n-type Si:P
[110]
2″
280
P/P
FZ 16-30
1 F @ <111> only
n-type Si:P
[110]
2″
1000
P/P
FZ 15-18
1 F @ <1,-1,0>
n-type Si:P
[100]
2″
300
P/P
FZ 1,000-1,600
SEMI Prime
n-type Si:P
[100]
2″
300
P/P
FZ 600-1,200
SEMI Prime,
n-type Si:P
[100]
2″
2000
P/E
FZ >600
SEMI Prime, , Individual cst
n-type Si:P
[100]
2″
200
P/P
FZ 500-1,500
SEMI Prime,
n-type Si:P
[100]
2″
300
P/E
FZ >300
SEMI Prime,
n-type Si:P
[100]
2″
500
P/P
FZ >200
SEMI Prime,
n-type Si:P
[100]
2″
300
P/P
FZ 50-110
SEMI Prime,
n-type Si:P
[100]
2″
280
P/P
FZ 20-70
SEMI Prime,
n-type Si:P
[100]
2″
300
P/E
FZ 10-40
SEMI Prime
n-type [...]
2019-03-07meta-author
PAM-XIAMEN is able to supply epitaxial thin film of P-type GaN on GaN substrate. P-type GaN thin film epitaxial on GaN substrate is the main technique for developing emitting device. Mg is the most common p-type dopant in III-nitride material systems, partly due to the [...]
2021-12-23meta-author
The International Technology Roadmap for Semiconductors (ITRS) identifies production test data as an essential element in improving design and technology in the manufacturing process feedback loop. One of the observations made from the high-volume production test data is that dies that fail due to [...]
PAM XIAMEN offers Glass Substrates(BK7 Glass and Corning Glass).
BK7 Glass
BK 7 (Schott) glass substrates 76.2mm x 25.4 mm x 0.5 mm, Double sides optical polished
BK7 (Schott) glass substrates 10 x10 x 0.5 mm, Double sides polished ( 60/40)
BK7 (Schott) glass [...]
2019-04-18meta-author
AlGaInP is used in manufacture of light-emitting diodes of high-brightness red, orange, green, and yellow color, to form the heterostructure emitting light. It is also used to make diode lasers.
AlGaInP layer is often grown by heteroepitaxy on gallium arsenide or gallium phosphide in order to form a quantum well structure.
1.Specs of AlGaInP Wafers on Chips
AlGaInP LED Wafer [...]