PAM XIAMEN offers LiAlO2 Lithium Aluminate Crystal Substrates.
Main Parameters | |
Crystal structure | M4 |
Unit cell constant | a=5.17 A c=6.26 A |
Melt point(℃) | 1900 |
Density | 2.62(g/cm3) |
Hardness | 7.5(mohs) |
Size | 10×3,10×5,10×10,15×15,20×15,20×20, |
Ф15,Ф20,Ф1″,Ф2″, Ф2.6″ | |
Thickness | 0.5mm, 1.0mm |
Polishing | Single or double side polished |
Crystal Orientation | <100> <001> |
Crystal orientation accuracy | ±0.5° |
Redirection the edge: | 2°(special in 1°) |
Angle of crystal | Special size and orientation are available upon request |
Ra: | ≤5Å (5µm×5µm), epi-ready |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.