1-1.lattice parameter
The lattice constant, or lattice parameter, refers to the constant distance between unit cells in a crystal lattice. Lattices in three dimensions generally have three lattice constants, referred to as a, b, and c. However, in the special case of cubic crystal structures, [...]
2018-06-28meta-author
2-28.WARP
Warp is the difference between the maximum and the minimum distances of the median surface of a free, un-clamped wafer from the reference plane defined above. This definition follows ASTM F657, and ASTM F1390,which deviation from a plane of a slice or wafer centerline [...]
2018-06-28meta-author
2-4.Wafer Surface Orientation
Denotes the orientation of the surface of a wafer with respect to a crystallographic plane within the lattice structure.
In wafers cut intentionally “off orientation”, the direction of cut is parallel to the primary at, away from the secondary at.
Measured with [...]
2018-06-28meta-author
2-3.Wafer Flat Length
Linear dimension of the at measured with ANSI certied digital calipers on a sample of one wafer per ingot.
2018-06-28meta-author
5-3-1 High-Temperature Device Operation
The wide bandgap energy and low intrinsic carrier concentration of SiC allow SiC to maintain
semiconductor behavior at much higher temperatures than silicon, which in turn permits SiC semiconductor
device functionality at much higher temperatures than silicon . As discussed in basic
semiconductor electronic [...]
2018-06-28meta-author
2-9.(Area) Wafer Contamination
Any foreign matter on the surface in localized areas which is revealed under high intensity (or diffuse) illumination as discolored, mottled, or cloudy appearance resulting from smudges, stains or water spots.
2018-06-28meta-author