The results of GaN epitaxial crystal growth on 4° off-axis Si- and C-face 4H-SiC without buffer layers by tri-halide vapor-phase epitaxy (THVPE) with high-speed wafer rotation and the properties of the obtained material are briefly described in this paper. GaN epitaxial layers were grown [...]
2019-10-18meta-author
Highlights
•
The temperature-dependent strengths of CVD ZnS were obtained.
•
The thermal shock behavior of infrared window was studied by finite element method.
•
Rapid heating thermal shock tests were conducted to validate the numerical results.
Abstract
The thermal shock failure has been recognized as one of key failure modes of [...]
2018-01-24meta-author
PAM XIAMEN offers 150mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Dia
Type
Dopant
Orien
Res
(Ohm-cm)
Thick
(um)
Polish
Grade
Description
PAM2716
150mm
N/A
650um
SSP
MECH
Low cost Si Wafer great for spin coating.
PAM2717
150mm
P
B
<100>
0-10
620 um
SSP
Test
Test Grade Silicon great for wafer processing studies.
PAM2718
150mm
N
<100>
0-100
625um
SSP
Test
6″ diameter (150mm), silicon wafers, N-type.
PAM2719
150mm
P
B
<100>
0.006-0.012
525um
SSP
Test
With Oxide Back Seal
PAM2720
150mm
P
B
<100>
1-100
500um
SSP
Test
2 SEMI-STD FLATS WHERE [...]
2019-02-20meta-author
PAM XIAMEN offers LaF3 crystal.
Structure
Lattice (A)
Melting Point
Density g/cm3
Hardness
Growth
Max. Xtl Size
Trigonal
a=b= 7.190 c=7.367 a=b=90o, g=120o
1493
5.936
4.5
Bridgman
20dx 100mm
LaF3 (100)ori. 9x9x0.5mm 1sp
LaF3 (100)ori. 10x10x0.5mm 1SP
LaF3 (100)ori. 7x7x0.5mm 2sp
LaF3 6.35 mm Dia. x 1.575mm ,fine ground
LaF3 (110)ori. 6 mm Dia. x 0.5mm 1sp
LaF3 (100)ori. 10 mm Dia. [...]
2019-05-07meta-author
PAM XIAMEN offers Silicon Ingots.
Material Description
4″Ø×219mm p-type Si:B[110]±1.5°, (59-67)Ohmcm, RRV<2.4%, One SEMI Flat, Diameter=(100.6-100.8) mm, C<3E16/cc, O2<9E17/cc
4″Ø ingot p-type Si:B[110] ±2°, Ro: 0.001-0.010 Ohmcm, Ground, SEMI
4″Ø×(504+504+523+147+144)mm, p-type Si:B[111], As-Grown, made by Crysteco (5 ing 6c, 10b(Gnd 1F), 14a(Gnd 1F), 21Aa, 30d(Gnd 1F))
4″Ø ingot p-type Si:B[111], [...]
2019-03-08meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111] ±0.5°
3″
415 ±15
E/E
FZ 2,000-5,000
SEMI Prime, Lifetime>1,500μs
n-type Si:P
[111] ±1°
3″
508
E/E
FZ 182-196
SEMI Test, TTV<3μm
Intrinsic Si:-
[100]
3″
300
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
300
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
380
P/E
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
380
P/E
FZ >20,000
SEMI Test, unpolished side has stain
Intrinsic Si:-
[100]
3″
380
P/E
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
500
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
500
P/P
FZ >20,000
SEMI Prime, Front Side Prime, back side Test
Intrinsic Si:-
[100]
3″
650
P/P
FZ >10,000
SEMI Prime, with LM, TTV<2μm
Intrinsic Si:-
[100]
3″
700
P/P
FZ >10,000
Test, scratrches and stains. [...]
2019-03-06meta-author