GaN(Gallium nitride), which is a compound semiconductor,it is a hard, high melting point materials, the melting point of about 1700 ° C, GaN is a high degree of ionizationof III-Vcompound (0.5 or 0.43). At atmospheric pressure, the GaN crystal is generally hexagonal wurtzite structure. In a cell four atoms, the atomic volume is about halfthat of the GaAs. GaN is Non-Toxic. Basic Parameters for Wurtzite crystal structure at 300K: Breakdown field ~5 x 106 V cm-1 Mobility electrons =< 1000 cm2 V-1 s-1 Mobility holes =< 200 cm2 V-1 s-1 Diffusion coefficient [...]
2012-05-21meta-author
GaN IR images reveal that Te inclusions exist in CdZnTe crystal in the form of square, hexagonal and triangular shapes. The density of Te inclusions for sizes above 5 μm sharply varied from 2.27 × 103 cm−2 to 4.52 × 105 cm−2 with a consequent reduction in IR transmittance from ∼60.5% to ∼55% when the Te-rich volume increased [...]
Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: a reflection high-energy electron diffraction study Reflection high-energy electron diffraction (RHEED) was used for in situ monitoring of the growth behavior of GaAs at various temperatures. The growth was performed on both singular and 2° [...]
PAM XIAMEN offers Boron Nitride Film on Silicon Wafer. Boron Nitride Film on Silicon Wafer , 24 nm / 4″ — BN-Si-100-24nm Boron nitride is a chemical compound with chemical formula BN, consisting of equal numbers of boron and nitrogen atoms. BN is isoelectronic [...]
2019-04-26meta-author
PAM-XIAMEN can supply SiC crystals, more specifications are found in https://www.powerwaywafer.com/sicsilicon-carbide-boule-crystal.html. Mid infrared laser (3-5μm) has important applications in environmental monitoring, gas molecule recognition, coherent tomography, and other fields. Especially in recent years in the research of generating single attosecond pulses from high-order harmonics, due to the [...]
2024-04-26meta-author
PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 4″ 525 P/P 1-100 SEMI Prime, TTV<5μm n-type Si:P [100] 4″ 525 P/E 0.3-0.5 SEMI n-type Si:P [100] 4″ 300 P/E 0.29-0.31 SEMI Prime n-type Si:P [100] 4″ 200 P/P 0.10-0.15 SEMI Test, Not sealed both sides scratched n-type Si:P [100] 4″ 200 P/P 0.10-0.15 SEMI Test, Both sides with scratches n-type Si:P [100] 4″ 200 P/E 0.10-0.15 SEMI Prime, Front-side Prime, Back-side Test grade polish n-type Si:Sb [100] 4″ 525 P/E 0.020-0.022 Prime n-type Si:Sb [100-6° towards[110]] ±0.5° 4″ 525 P/E 0.015-0.020 SEMI Prime n-type Si:Sb [100] 4″ 525 P/E 0.011-0.014 Prime n-type Si:Sb [100] 4″ 305 ±3 P/P 0.010-0.025 SEMI Prime, TTV<1μm n-type Si:Sb [100] 4″ 525 P/E 0.01-0.02 SEMI Prime, TTV<5μm n-type Si:Sb [100] 4″ 525 P/E 0.01-0.02 SEMI Prime n-type Si:As [100] 4″ 525 P/E 0.0025-0.0035 SEMI Prime n-type [...]
2019-03-05meta-author