PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
8
SSP
Arsenic
N+
100
0,0 ± 0,0
010 ± 1
0.0 ± 0.4°
0.002 – 0.003 Ohmcm
200 ± 0.1 mm
725 ± 15 µm
6
60
8
SSP
Boron
P
100
0,0 ± 0,0
011 ± 1
3.5 – 7.0 Ohmcm
200 ± [...]
2019-02-25meta-author
Effect of annealing on the residual stress and strain distribution in CdZnTe wafers
The effect of annealing on residual stress and strain distribution in CdZnTe wafers was studied based using an X-ray diffraction (XRD) method. The results proved the effectiveness of annealing on the reduction [...]
PAM XIAMEN offers YBCO Epi Film on SrTiO3 , LaAlO3 or Al2O3,LSAT.
One Side 100nm YBCO Film on both side polished SrTiO3(100) 10x10x0.5 mm substrate
One Side 100nm YBCO Film on SrTiO3(100) 10x10x0.5 mm substrate
One Side 400nm YBCO Film on SrTiO3(100) 10x10x0.5 mm [...]
2019-04-29meta-author
PAM XIAMEN offers Ti – Titanium Substrate ( Polycrystalline).
General Properties for Titanium
Symbol Ti
Atomic Number 22
Atomic Weight: 47.867
Crystal structure: HCP
Lattice constant at room temperature a: 0.295 nm
Lattice constant at room temperature b: 0.468 nm
Density: 4.506 g/cm3
Melting Point: 1668°C [...]
2019-05-10meta-author
Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocation
Highlights
•High-quality InSb was grown on GaAs by MBE using a “buffer-free” method.
•The strain energy is relieved by interfacial misfit dislocations observed by TEM.
•The type and separation of dislocations are [...]
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111]
2″
330
P/E
3-7
SEMI Prime
n-type Si:P
[111]
2″
275
P/P
2.5-3.5
SEMI Prime
n-type Si:P
[111]
2″
5000
P/E
2.0-3.1
Prime, NO Flats, Individual cst
n-type Si:P
[111]
2″
5000
P/E
2-3
Prime, NO Flats, Individual cst
n-type Si:P
[111-8°]
2″
280
P/E
1.3-1.8
SEMI Prime,
n-type Si:P
[111-3.5°]
2″
280
P/E
1-30
SEMI Prime,
n-type Si:P
[111-2.5°]
2″
500
C/C
1-20
SEMI Prime
n-type Si:P
[111]
2″
7500
P/E
1-10
SEMI Prime, , Individual cst
n-type Si:Sb
[111-3°]
2″
300
P/E
~0.02
SEMI Prime
n-type Si:Sb
[111-1° towards[112]]
2″
500
P/E
0.017-0.026
SEMI Prime,
n-type Si:Sb
[111-2°]
2″
200
P/E
~0.01
SEMI Prime,
n-type Si:Sb
[111]
2″
280
P/E
0.01-0.02
SEMI Prime,
n-type Si:Sb
[111-2°]
2″
280
P/E
0.008-0.020
SEMI Prime,
n-type Si:As
[111]
2″
300
P/E
0.0030-0.0034
SEMI Prime,
n-type Si:As
[111]
2″
300
P/E
0.001-0.005
SEMI Prime,
n-type Si:As
[111-4°]
2″
350
P/E
0.001-0.005
SEMI [...]
2019-03-07meta-author