Q:Dislocation density < 1E8 of GaN on sapphire from what kind of characterization?
A:Considering edge dislocation and mixing dislocation and then abtained by XRD
Q:Dislocation density < 1E8 of GaN on sapphire from what kind of characterization?
A:Considering edge dislocation and mixing dislocation and then abtained by XRD
Q: After MOCVD, do you anneal the wafer for p-GaN activation? A:Yes! We will anneal the wafer for p-GaN activation
Q:Could you tell us also what type of 4-H polytype SiC sudstrate you are able to provide? A: Sure.
Q:We request for the following items 1. Silicon (Si) single crystal wafers, polished on one side N-type, orientation<100>, Resistivity 5E-3 ohm.cm, Thickness: 0.1 to 0.5 mm 2. Silicon (Si) single crystal wafers, polished on one side P-type, orientation <100>, Resistivity 5E-3 ohm.cm, Thickness: 0.1 to 0.5 [...]
Q: The epitaxial wafer on pss substrate is attractive to me, so I want to know the overall efficiency it can deliver. Could you please tell me an efficiency number (lm/w or cd/A or EQE) of the device based on a structure similar to [...]
Q: For blue wafer epi on flat substrate, it would be important to omit / leave out the u-GaN layer as we want to LLO and backside conacting. Is that possible? A:Yes, it is no problem, some clients bought our wafers for LLO.
Q:Can you supply 4″ AlGaAs epi wafers for IR LEDs? A:Yes, we can offer 850nm or 620nm for 4” size.
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