PAM XIAMEN offers 3″Prime Silicon Wafer Thickness 375±25μm.
3″ Si wafer
Diameter: 76.2 +/- 0,1 mm
Thickness: 375±25μm
Orientation: <111>
Dopant: p-type/Boron
Resistivity<0.005Ωcm
Front side polished
Back side: frosted
SEMI standard
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com [...]
2019-07-05meta-author
PAM XIAMEN offers Silicon Ingots.
Material Description
FZ 4″Ø×105mm ground ingot, n-type Si:P[111] ±2°, (1-2)Ohmcm
FZ 4″Ø×374mm ground ingot, n-type Si:P[111] ±2°, (429.4-453.7)Ohmcm, MCC Lifetime=11,866µs
FZ 4″Ø×400mm ground ingot, n-type Si:P[111] (446.9-458.9)Ohmcm, MCC Lifetime=10,670µs
FZ 4″Ø ingot Intrinsic Si:-[100], Ro: >20,000 Ohmcm, MCC Lifetime>1,200μs, Ground, (6 ingots: 294mm, 296mm, 296mm, 294mm, 219mm, 112mm)
FZ 4″Ø ingot Intrinsic [...]
2019-03-08meta-author
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:Multisite microLED optrode array for neural interfacing
Published by:
Niall McAlinden; Yunzhou Cheng; Robert Scharf; Enyuan Xie; Erdan Gu; Christopher F. Reiche; [...]
2019-12-09meta-author
PAM XIAMEN offers 6″Prime Silicon Wafer Thickness 1500±25μm.
Diameter 150mm
Thickness 1500±25μm
phosphorus, boron or Antimony doped boron,<100>
SSP
Resistivity 1-100ohm cm
with 200A thermal oxide and 1200A nitride
TTV < 15um
BOW < 80um
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-07-02meta-author
PAM-XIAMEN offers InGaAs APD wafers with high performance. InGaAs avalanche photo diodes(InGaAs APD) are highly regarded for its low noise, higher bandwidth, and spectral response extended to 1700 nm. It is available for 1550nm wavelength after optimizing and very suitable for use in eye-safe laser ranging [...]
2021-04-15meta-author
PAM-XIAMEN offers 1550nm laser diode wafer, which is an epitaxial wafer of a diode laser structure emitting around 1550 nm (on InP substrate), and the wafer dimension for laser diode 1550nm can be 2” or 3”. You can fabricate a laser for your application such [...]
2019-03-13meta-author