PAM-01C2 is a hemisphere CZT based probe in a super small size. It can detect X-ray and low energy γ-ray in a high resolution.
PAM-01C2 integrated customized CZT crystal and low noise charge sensitive preamplifier circuit. It can convert X/γ-ray into exponential decay signals. Working [...]
2019-04-23meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[110]
2″
2000
P/P
1-10
1 F @ <1,-1,0>
p-type Si:B
[110]
2″
350
P/E
0.1-1.0
PF<111> SF 109.5°
p-type Si:B
[110]
2″
280
P/P
0.080-0.085
PF<111> SF 109.5°
p-type Si:B
[100]
2″
500
P/P
1,300-8,000
SEMI Prime
p-type Si:B
[100]
2″
500
P/P
1,300-2,600
SEMI Prime
p-type Si:B
[100]
2″
250
P/P
FZ 510-1,200
SEMI Prime
p-type Si:B
[100]
2″
300
P/P
~150
SEMI Prime
p-type Si:B
[100]
2″
300
P/P
90-120
SEMI Prime
p-type Si:B
[100]
2″
300
P/P
70-80
SEMI Prime
p-type Si:B
[100]
2″
1400
P/P
6-8
Prime, NO Flats
p-type Si:B
[100]
2″
1500
P/P
6-8
Prime, NO Flats
p-type Si:B
[100]
2″
3000
P/E
6-8
Prime, NO Flats, Individual cst
p-type Si:B
[100]
2″
3000
P/E
4.9-5.3
Prime, NO Flats, Individual cst
p-type Si:B
[100]
2″
300
P/E
1-10
SEMI Prime
p-type Si:Ga
[100]
2″
350
P/P
1-5
SEMI Prime
p-type Si:B
[100]
2″
500
P/E
1-2
SEMI [...]
2019-03-07meta-author
PAM XIAMEN offers Te-Dy-Fe (Directionally solidified GMM).
Giant magnetostrictive material is an alloy made of terbium, dysprosium and iron by directional solidification. It can change electrical energy into mechanical action or vice versa because of its merit as being sensing and actuating material. Demanding [...]
2019-05-20meta-author
PAM-XIAMEN can offer FZ neutron transmutation doping (NTD) silicon wafer with a uniform doping concentration and uniform radial resistivity distribution. At present, silicon material is still the most important basic material in the electronic information industry. More than 95% of semiconductor devices and more [...]
2021-06-24meta-author
Atomic Layer Deposition (ALD), also known as atomic layer epitaxy (ALE), is an atomic-scale thin film preparation technology. It can deposit ultra-thin films with uniform thickness, controllable thickness and adjustable composition. With the development of nanotechnology and semiconductor microelectronics, the size requirements of devices [...]
2022-05-31meta-author
PAM-XIAMEN can offer 780nm laser diode wafer with quantum well based on GaAs substrate. The semiconductor lasers fabricated our LD wafer are applied in the fields of laser cutting, laser coating, laser medical treatment, optical communication, infrared security and etc., which have the disadvantages [...]
2016-06-13meta-author