Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of AlGaAs layer and other related products and services announced the new availability of size 2”-3” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.
Dr. Shaka, said, “We [...]
2017-08-22meta-author
Photoluminescence-based material quality diagnostics in the manufacturing of CdZnTe ionizing radiation sensors
A photoluminescence method was used for characterization of crystalline perfection of CdZnTe single crystals in the different stages of an up-to-date process of ionizing radiation sensor production. It was shown that the point [...]
The thermoelectric properties between 10 and 300 K and the growth of single crystals of n-type and p-type GeBi4Te7, GeSb4Te7 and Ge(Bi1−xSbx)4Te7 solid solution are reported. Single crystals were grown by the modified Bridgman method, and p-type behavior was achieved by the substitution of Bi by [...]
2019-10-28meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111]
2″
275
P/P
2.5-3.5
SEMI Prime,
n-type Si:P
[111]
2″
500
P/E
2.2-3.8
SEMI Prime,
n-type Si:P
[111]
2″
300
P/E
1-10
SEMI Prime, , TTV<5μm
n-type Si:P
[111]
2″
500
P/E
1-10
SEMI Prime,
n-type Si:P
[111] ±0.5°
2″
6000
P/E
1-10
SEMI Prime, Individual cst
n-type Si:Sb
[111] ±0.5°
2″
300
P/E
0.05-0.09
SEMI Prime,
n-type Si:Sb
[111-3.5°] ±0.5°
2″
300
P/E
0.05-0.09
SEMI Prime, , in hard cassettes of 5 & 8 wafers
n-type Si:Sb
[111]
2″
2900
P/P
0.013-0.015
Prime, NO Flats, Individual cst
n-type Si:Sb
[111-2.5°] ±0.5°
2″
280
P/E
0.012-0.017
SEMI,
n-type Si:As
[111] ±0.5°
2″
279
P/E
0.001-0.005
SEMI Prime
p-type [...]
2019-03-07meta-author
Highlights
•A recessed structure was used on the GaAs/Si solar cells to reduce the current path.
•The associated series resistance was reduced by a recessed structure.
•The carrier recombination loss was improved due to pyramid-like recessed structure.
In this study, epitaxial layers of GaAs-based solar cells were grown [...]
Light–Output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching
In this paper, we report the fabrication and characteristics of nano-roughened GaN laser lift-off (LLO) light-emitting diodes (LEDs) with different scale surface roughness. The surface roughness of devices was controlled by [...]
2013-03-29meta-author