PAM-XIAMEN, one of LED wafer manufacturers, offers GaN Wafer for Fabricating LED Devices, which is GaN Epi Structure with InGaN MQWs on sapphire substrate, and can be blue or green emission:
1. Specification of GaN Wafer for LED Devices
No1. PAM200614-GAN-LED
size : 2 inch
WD : 455 ± 10nm
[...]
2020-06-02meta-author
PAM XIAMEN offers 6″ FZ Silicon Wafer-6
N Type/Phosphorus doped
Orientation (111)
Thickness 400±10μm
Resistivity 2000-5000Ωcm
Flat one 47.5 ± 2.5, <110> ±1°
TTV≤15μm
Bow/Warp ≤20μm
FLATNESS(FPD)≤5μm
Front Side: Chemical Mechanical
Polished
Back side: Damaged, with SiO2/Al2O3
Particle ≤10 @≥0.3㎛
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
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