We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA）,University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:Incipient plasticity in 4H-SiC during quasistatic nanoindentation
Published by:
Saurav Goel ;Jiwang Yan ;Xichun Luo ;Anupam Agrawald
a School of Mechanical and Aerospace [...]
2019-12-09meta-author
PAM-H01 series are CZT crystal based detectors which have a special structure. They can detect X-ray and middle to high energy γ-ray in a high energy resolution.
Specification
Material
CdZnTe
Density
5.8g/cm3
Volume resistance
>1010Ω.cm
Dimensions
5.5×5.0mm2
10.0×10.0mm2
Thickness
2.75mm
5.0mm
Electrode material
Au
Operation temperature
-20℃-+40℃
Energy range
10KeV~3MeV
Energy resolution(22℃)
<3%@662MeV
Peak-compton ratio
>3
>5
Storage temperture
10℃~40℃
Storage humidity
20%-80%
Remarks
Customized available
Spectrum
Features
Room temperature working
High energy resolution
Quick response
Long-time [...]
2019-04-24meta-author
PAM XIAMEN offers Ceramic ALN SUBSTRATE.
100X100 Thickness 0.5±0.03mm
Item
Unit
Value
Test Standard
1）Colour
—-
Gray
3.2
2）Density
g/cm³
≥3.33
GB/T 2413
3）Thermal Conductivity
20℃，W/(m·K)
≥170
GB/T 5598
4）Dielectric Constant
1MHz
8~10
GB/T 5594.4
5）Dielectric Strength
KV/mm
≥17
GB/T 5593
6）Flexural Strength
MPa
≥450
GB/T 5593
7）Camber
Length‰
≤2‰
8）Surface roughness Ra
μm
0.3~0.6
GB/T 6062
9）Water absorption
%
0
GB/T 3299-1996
10)Volume resistivity
20℃，Ω.cm
≥1013
GB/T 5594.5
11）Thermal expansivity
10-6/℃
20~300℃
2~3
GB/T5593
300~800℃
2.5~3.5
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen [...]
2019-07-03meta-author
GaAs MESFET, HEMT and HBT Competition with Advanced Si RF Technologies
TECHNOLOGIES
The competing technologies on the RF market will be briefly described. The given key figures are oriented to production processes and are no records that are in principle feasible in the technology.
The MESFET (fig. [...]
PAM XIAMEN offers BGO, Bismuth germanate, Bi4Ge3O12 Scintillation Crystals.
SPECIFICATIONS:
Crystal structure: Cubic
Lattice Parameter: a=10.518 Å
Density: 7.13（g/cm3）
Hardness: 5（mohs）
Melt point: 1050℃
Index of refraction: 2.15
Radiation length: 1.1cm
Peak of fluorescence spectra : 480nm
Decay time: 300ns
Relative light output（%）: 10-14 Nal（Tl）
Energy resolution: 20% @511KV
Crystal orientation: <001>、<110>
Size（mm):Special size and orientation are available upon request
Polishing: Single or double
Packaging: Clean room
MAIN APPLICATIONS
Positron emission tomography (PET)
High-energy physics
Nuclear medicine
Geological prospecting
Gamma pulse spectroscopy
BGO [...]
2019-03-11meta-author
PAM XIAMEN offers Silicon Wafer Thickness:275+- 25µm.
Silicon Wafer ,2in Si Wafer,P/Boron <111> ON +-1°,
0.01-0.02 Ohm-cm ,275+- 25µm Thickness,SSP,
PRIME -Si Wafers,Single SidePolished/Etched Back,
Primary Semi Std Flat,
Surface Roughness <1nm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [...]
2019-08-22meta-author
