InGaAsP/InGaAs on InP substrates
We provide InGaAsP/InGaAs epi on InP substrates as follows:
Structure1: 1.55um InGaAsP QW laser
No.
Layer
Doping
0
InP Substrate
S-doped, 2E18/cm-3
1
n-InP buffer
1.0um, 2E18/cm-3
2
1.15Q-InGaAsP waveguide
80nm,undoped
3
1.24Q-InGaAsP waveguide
70nm,undoped
4
4×InGaAsP QW(+1%)
5×InGaAsP Barrier
5nm
10nm
PL:1550nm
5
1.24Q-InGaAsP waveguide
70nm,undoped
6
1.15Q-InGaAsP waveguide
80nm,undoped
7
InP space layer
20nm,undoped
8
InP
100nm,5E17
9
InP
1200 nm, 1.5E18
10
InGaAs
100 nm, 2E19
Specification of Structure1:
1) Method: MOCVD
2) Size of wafer: 2”
3) InGaAsP/InGaAs growth on [...]
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111]
2″
275
P/P
2.5-3.5
SEMI Prime,
n-type Si:P
[111]
2″
500
P/E
2.2-3.8
SEMI Prime,
n-type Si:P
[111]
2″
300
P/E
1-10
SEMI Prime, , TTV<5μm
n-type Si:P
[111]
2″
500
P/E
1-10
SEMI Prime,
n-type Si:P
[111] ±0.5°
2″
6000
P/E
1-10
SEMI Prime, Individual cst
n-type Si:Sb
[111] ±0.5°
2″
300
P/E
0.05-0.09
SEMI Prime,
n-type Si:Sb
[111-3.5°] ±0.5°
2″
300
P/E
0.05-0.09
SEMI Prime, , in hard cassettes of 5 & 8 wafers
n-type Si:Sb
[111]
2″
2900
P/P
0.013-0.015
Prime, NO Flats, Individual cst
n-type Si:Sb
[111-2.5°] ±0.5°
2″
280
P/E
0.012-0.017
SEMI,
n-type Si:As
[111] ±0.5°
2″
279
P/E
0.001-0.005
SEMI Prime
p-type [...]
2019-03-07meta-author
PAM XIAMEN offers NdGaO3 Substrate.
NdGaO3 Substrate (011)
NdGaO3 (011) 10x10x0.4 mm, 1 SP
NdGaO3 (011) 10x10x0.5 mm, 1 SP
NdGaO3 (011) 2″ dia x0.5 mm, 1 SP
NdGaO3 substrates(001)
NdGaO3 (001) 5x5x0.5 mm, 1 SP
NdGaO3 (001) 10x10x0.5 mm, 1 SP
NdGaO3 (001) 10x10x0.5 [...]
2019-05-13meta-author
PAM XIAMEN offers Single-emitter LD Chip 830nm @2W.
Brand: PAM-XIAMEN
Wavelength: 830nm
Stripe width: 40um
Output Power: 2W
Cavity Length:2mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]
2019-05-09meta-author
150mm Germanium Substrate and ingot
Xiamen Powerway Advanced Material Co.,Ltd., offers monocrystal or polycrystalline150mm Germanium Substrate and ingots for Optical application or for epi-growth in microelectronics, please see below detail specification:
No.1:Germanium Substrate, undoped
Prime Grade PAM-190725-GE
Diameter: 6”dia.
Intrinsic undoped Ge,
(100) or (111)+/-0.5deg.
Resistivity>30 Ohm.cm,
Thickness:500±25µm,
SEMI Standard
TTV<5µm
Both-sides-polished,
Sealed in [...]
PAM XIAMEN offers 12 inch silicon wafers. We have all the grades including:
Prime grade 300mm silicon wafers
Test grade 300mm silicon wafers
Mechanical 300mm silicon wafers
Reclaimed 300mm silicon wafers
We can deposit the following onto our 300mm silicon wafers including:
Thermal oxide, wet and dry on 300mm silicon [...]
2019-02-20meta-author