PAM XIAMEN offers Single-emitter LD Chip 755nm @8W.
Brand: PAM-XIAMEN
Wavelength: 755nm
Stripe width: 350um
Output Power: 8W
Cavity Length:2.5mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]
2019-05-09meta-author
PAM XIAMEN offers 785nm laser diode wafers grown on GaAs substrate. Specific epi structure please see below:
1. Specifications of 785nm GaAs LD Epi Wafer
No.1 AlAs / AlGaAs LD Epi on GaAs PAM200420-LD
Layer
Material
Thickness
Notes
Layer 7
AlAs
–
Layer 6
GaAs
–
Layer 5
AlAs
–
Layer 4
AlGaAs
150 nm
Emitting at 785nm
Layer 3
AlAs
–
Layer 2
AlGaAs
–
Emitting at 700 nm
Layer [...]
2019-03-13meta-author
You can buy fused silica quartz wafer from PAM-XIAMEN. It is usually made by smelting, cutting and grinding quartz, and the silica content of fused quartz wafer can reach more than 99.99%. The quartz hardness is seven on the Mohs scale, and it has the characteristics of high [...]
2019-02-27meta-author
PAM-NIS CZT radionuclide recognizer is compact and portable with following advantages:
1) The energy resolution is less than 1.8% at 662keV, which is higher than scintillator detectors;
2) The detector size is smaller than Ge detector, working at room temperature without cooling;
3) It can be recharged [...]
2023-07-07meta-author
PAM XIAMEN offers PbTe single crystal substrate.(Not sell it temporarily)
Lead telluride (Phoebe) is a compound of lead and tellurium (PbTe); it is a narrow gap semiconductor. It occurs naturally as the mineral altaite.
It is often alloyed with tin to make lead tin telluride, [...]
2019-05-14meta-author
A novel method for estimating threshold voltage shifts of n-channel SiC MOSFETs under negative gate bias stresses has been proposed. In the proposed method, n-type SiC MOS capacitors were utilized instead of n-channel SiC MOSFETs. The n-type SiC MOS capacitors were exposed to ultraviolet [...]
2019-11-20meta-author