PAM XIAMEN offers 4″ Prime EPI Wafer.
Substrate:
1. Growth Method CZ
2. Diameter100+/-0.5mm
3. Type-Dopant, P- Boron
4. Resistivity 0.002 – 0.003 ohm-cm
5. Resistivity Radial Variation<10 %
6. Crystal Orientation<111> 4+/- 0.5degree
7. Primary Flat: Orientation Semi degree, Length Semi mm
8. [...]
2019-07-03meta-author
Pure silicon is more like an insulator than a conductor, and when external forces are applied (such as applied voltage), it has no ability to change its conductive state. So other elements must be doped into silicon, and the two most important dopants are boron (B) and [...]
2023-08-10meta-author
PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade.
Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
2019-05-20meta-author
PAM XIAMEN offers 4″Silicon Ignot.
Silicon ingot, per SEMI, G 4″Ø (Diameter 100.5±0.3mm),
FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 20,000 Ohmcm,
Ground Ingot, NO Flats. Lifetime>1,000us,
Ox/Carbon <1E16/cc.
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found [...]
2019-07-05meta-author
Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) offers InSb crystal wafer up to 2″ in diameter that are grown by a modified Czochralski method from highly purified, zone refined polycrystalline ingots. More about the indium antimonide crystal substrate specifications, please see the following part:
1. Indium Antimonide [...]
VCSEL Laser Wafer Chip
PAM-XIAMEN offer 850 nm,850nm and 940nm VCSEL(vertical-cavity surface-emitting laser) epitaxial wafer for the tele communication, gesture recognition,3D imaging and other applications, which is grown by MOCVD by with GaAs/AlGaAs multiple quantum wells (MQWs) as the active layer.
We have three items: VCSEL [...]
2020-04-23meta-author