PAM-XIAMEN can offer GaAs epiwafer (gallium arsenide epiwafer) with p-type & n-type AlGaAs multilayer for VCSEL laser application. The specifications of GaAs epiwafer are as follow:
1. Specifications of GaAs Epiwafer with AlGaAs Multilayers
VCSEL, 980nm, GaAs epiwafer, 4″size
PAM210208
| Layer No. | Material | Group | Repeat | Mole Fraction(x) | Strain(ppm) | PL(nm) | Thickness(nm) | Dopant |
| 32 | GaAs | – | – | – | – | – | 156 | C |
| 31 | Al(x)GaAs | – | – | 0.04 | – | – | 50.5 | C |
| 30 | Al(x)GaAs | – | – | 0.87->0.04 | – | – | 20 | C |
| 29 | Al(x)GaAs | – | – | 0.87 | – | – | 59.7 | C |
| 28 | Al(x)GaAs | – | 16 | 0.04->0.87 | – | – | 20 | C |
| 27 | Al(x)GaAs | – | 0.04 | – | – | 51.5 | C | |
| 26 | Al(x)GaAs | – | 0.87->0.04 | – | – | 20 | C | |
| 25 | Al(x)GaAs | – | 0.87 | – | – | 59.7 | C | |
| 24 | Al(x)GaAs | – | – | 0.04->0.87 | – | – | 20 | C |
| 23 | Al(x)GaAs | – | – | 0.04 | – | – | 32.9 | C |
| 22 | Al(x)GaAs | – | – | 0.80->0.04 | – | – | 20 | C |
| 21 | Al(x)GaAs | – | – | 0.98 | – | – | 20 | C |
| 20 | Al(x)GaAs | – | – | 0.8 | – | – | 61.6 | C |
| 19 | GaAsP | – | – | – | – | – | – | UD |
| 18 | In(x)GaAs | – | – | – | – | 970nm | – | UD |
| 17 | GaAsP | – | – | – | – | – | – | UD |
| 16 | In(x)GaAs | – | – | – | – | 970nm | – | UD |
| 15 | GaAsP | – | – | – | – | – | – | UD |
| 14 | In(x)GaAs | – | – | – | – | 970nm | – | UD |
| 13 | GaAsP | – | – | – | – | – | – | UD |
| 12 | Al(x)GaAs | – | – | 0.87 | – | – | 59.7 | Si |
| 11 | Al(x)GaAs | – | – | 0.04->0.87 | – | – | 20 | Si |
| 10 | Al(x)GaAs | – | – | 0.04 | – | – | 51.5 | Si |
| 9 | Al(x)GaAs | – | – | 0.87->0.04 | – | – | 20 | Si |
| 8 | Al(x)GaAs | – | 6 | 0.87 | – | – | 59.7 | Si |
| 7 | Al(x)GaAs | – | 0.04->0.87 | – | – | 20 | Si | |
| 6 | Al(x)GaAs | – | 0.04 | – | – | 51.5 | Si | |
| 5 | Al(x)GaAs | – | 30 | 0.92->0.04 | – | – | 20 | Si |
| 4 | Al(x)GaAs | – | 0.92 | – | – | 59.8 | Si | |
| 3 | Al(x)GaAs | – | 0.04->0.92 | – | – | 20 | Si | |
| 2 | Al(x)GaAs | – | 0.04 | – | – | 51.5 | Si | |
| 1 | GaAs | – | – | – | – | – | 500 | Si |
| 4 inch GaAs substrate Si doped; Etalon spec: 980+/-5nm(>90% area of wafer in spec: 970+/-2nm; | ||||||||
2. What Is VCSEL?
The full name of VCSEL is Vertical Cavity Surface Emitting Laser, abbreviated as surface-emitting laser, and it is one of the light sources used in optical fiber communication.
VCSEL Structure
2.1 Introduction of VCSEL
Different from other light sources, such as LED (Light Emitting Diode) and LD (Laser Diode), the variable frequency of VCSEL light source is adjusted to several Giga Hz, and the transmission rate naturally has a Giga bps level. Although the traditional LD has the above-mentioned performance, it is more expensive and its luminous efficiency is far worse than that of VCSEL. In addition, the driving voltage and current required by the VCSEL are very small, making the lifetime of more than ten million hours, which is more than 100 times that of other light sources.
OPEAK module/desktop VCSEL light source is a highly stable and cost-effective light source. The use of automatic precision temperature control (ATC) and power control (APC) technologies ensures the long-term stability of the optical power and spectral shape. There are multiple types of connectors or adapters selected for single-mode fiber output. It is more convenient for fast interconnection with external equipment in low loss. The output optical power can be adjusted, and the internal modulation mode can be selected.
The vertical cavity surface emitting laser (VCSEL) is a new type of laser that emits light from a vertical surface.
2.2 The structure different from the traditional edge-emitting laser brings many advantages:
The small divergence angle and the circularly symmetrical far and near field distribution greatly improve the coupling efficiency with the fiber, and there is no need for the complicated and expensive beam shaping systems. It is proved that the coupling efficiency with multimode fiber can be greater than 90%.
The length of the optical cavity is extremely short, which causes the longitudinal mode spacing to be extended. Then the single longitudinal mode operation can be realized in a wide temperature range, and the dynamic modulation frequency is high. The reduced cavity volume makes the several orders of magnitude of spontaneous emission factor higher than that of ordinary end-emitting lasers, which leads to great improvements in many physical properties; it can be tested on-chip, greatly reducing the development cost.
The light output direction is perpendicular to the substrate, which can easily realize the integration of high-density two-dimensional area arrays and achieve higher power output. And because multiple lasers can be arranged in parallel in the direction perpendicular to the substrate, it is very suitable for applications in parallel optical transmission and parallel optical interconnection. It has been successfully applied to single-channel and parallel optical interconnection at an unprecedented speed. With its high performance and competitive cost, it has been widely used in broadband Ethernet and high-speed data communication networks. The most attractive of VCSEL is that its manufacturing process is compatible with light-emitting diodes (LEDs), and the cost of large-scale manufacturing is very low.
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com.