150mm 4H n-type SiC epi wafer with excellent uniformity and extremely low defect density is available. SiC epitaxial wafer refers to a silicon carbide wafer on which a single crystal film (epitaxial layer) with certain requirements and the same crystal as the substrate is grown on a silicon [...]
2020-03-10meta-author
PAM XIAMEN offers 8″CZ Prime Silicon Wafer 8 inch prime silicon wafer Orientation CZ <111> Diameter 200mm Thickness 1±0.025mm Total Thickness Variation ≤25μm Warp ≤50μm Surface Sigle -side Polished P type Resistivity 1-80Ωcm For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-10meta-author
4H N type SiC wafer with Nitrogen doped is available, size from 2” to 4”. Dummy wafer and prime wafer are available. High quality single crystal SiC wafer are available for MBE growth research, electronics and optoelectronics industries. SiC wafer is a next-generation semiconductor material with [...]
2018-08-07meta-author
High quality large-area single crystal copper substrate is an effective method for preparing high-quality large-area single crystal graphene. There are several main methods for preparing single crystal copper: 1) Commercial single crystal copper is mostly produced by using the high-temperature hot casting mode continuous [...]
2024-03-12meta-author
The commonly used 4H-SiC and 6H-SiC space groups are both P63mc, and the point group is 6mm. 6mm belongs to one of 10 polar point groups (1, 2, 3, 4, 6; m, 3m; mm2, 4mm, 6mm), so 4H-SiC and 6H-SiC are polar crystals. The [...]
2021-04-09meta-author
P type GaAs(Gallium Arsenide) Wafer PAM XIAMEN offers p type GaAs(100) Zn-doped crystal Wafer. 1.Wafer List: GF-GaAs (100) orientation, Zn-doped 10x10x0.625 mm, single side polished. GaAs Wafer – Growing Method: VGF (100) Zn doped P-type, , 2″x0.5 mm, single side polished, (1-5) x 10^19 /cm^3 [...]
2019-04-22meta-author