Enhancement of minority carrier lifetimes in n- and p-type silicon wafers using silver nanoparticle layers

  • Home
  • News
  • Enhancement of minority carrier lifetimes in n- and p-type silicon wafers using silver nanoparticle layers

Enhancement of minority carrier lifetimes in n- and p-type silicon wafers using silver nanoparticle layers

The quasi-steady state photo conductance technique is employed to probe effective minority carrier lifetime (τ eff) modifications after integrating silver nanoparticles (Ag NPs) on n-type and p-type silicon wafers with a native oxide surface. Our observations reveal that τ eff modification is very sensitive to Ag NPs size, surface coverage and also wafer type. With an optimized Ag NPs, τ eff is enhanced from 4.4 μs to 10 μs for a p-type silicon wafer, and from 8.1 μs to 14 μs for an n-type silicon wafer. We attributed the enhancement in τ eff to the partial field effect passivation of the silicon surface by the surface plasmon resonance near-fields of Ag NPs after excitation. Our investigations demonstrate that an optimized Ag NPs on any silicon wafer with a native oxide layer can work as both a light trapping and a surface-passivating layer.

source:iopscience

For more information, please visit our website: https://www.powerwaywafer.com,

send us email at [email protected] or [email protected].

2018-11-21

Share this post

Related Posts

4″ Silicon EPI Wafer-4

PAM XIAMEN offers 4″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 4″Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 43 n- Si:P 600 ±10% N/N+ 4″Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 43 n- Si:P 340 ±10% N/N+ 4″Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 43 n- Si:P >200 N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 50 n- Si:P 36±4 N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 15 n- Si:P 5.4±0.7 N/N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 75 n- Si:P 66 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 78 n- Si:P 25 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/EOx 78 n- Si:P 20 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 80 n- Si:P 17.5 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 80 n- Si:P 60±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 10 n- Si:P 2±1 N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 80 n- Si:P 70±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 10 n- Si:P 2±1 N/N/N+ 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 22.5 p- Si:B 15±10% P/N/N+ 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 15 n- Si:P 6±0.9 P/N/N+ 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 38 p- [...]

2019-03-08meta-author
InSb Wafer

PAM XIAMEN offers InSb Wafer. InSb Ge-doped InSb (100) 10x10x 0.45 mm, P type, Ge doped, 1 side polished InSb (100) 5x5x 0.45 mm, P type, Ge doped, 1 side polished-1 InSb (100) 2″ dia x 0.45 mm, P type, Ge doped , 1 [...]

2019-05-07meta-author
Nichia Develops Higher Power Green Laser Diodes

Nichia Develops Higher Power Green Laser Diodes   CompoundSemi News Staff November 23, 2012…Nichia Corporation reports that it has successfully developed a high-power pure green laser diode which has optical output power higher than 1W with 525nm lasing wavelength. Nichia says that the laser will be applied [...]

2013-02-28meta-author
2″ Silicon Wafer-6

PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [111] 2″ 1000 P/E 0.001-0.005 SEMI Prime p-type Si:B [111] ±0.5° 2″ 500 P/P <0.01 SEMI Prime p-type Si:B [111] ±0.5° 2″ 500 P/P <0.01 {0.00087-0.00100} SEMI Prime p-type Si:Ga Poly. 2″ C/C 0.024-0.036 Gallium doped Concentrate (each with measured Gallium content) n-type Si:P [110] 2″ 280 P/E 19-33 SEMI Prime, 1 Flat @ [1,-1,0], in hard cst n-type Si:P [110] 2″ 280 P/E 19-33 SEMI Prime, n-type Si:P [110] ±0.5° 2″ 300 P/E 1-5 SEMI Prime, , TTV<5μm n-type Si:Sb [110] 2″ 375 P/E 0.005-0.020 SEMI n-type Si:Sb [110] 2″ 375 P/E 0.005-0.020 SEMI n-type Si:P [100] 2″ 400 P/P 210-880 SEMI Prime, n-type Si:P [100] 50mm 280 P/E 130-280 SEMI Prime, n-type Si:P [100] 2″ 300 P/P 33-48 SEMI TEST [...]

2019-03-07meta-author
3″ Silicon EPI Wafer-1

PAM XIAMEN offers 3″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 3″Øx381μm p- Si:B[111] 0.004-0.008 P/E 12.5±2.5 p- Si:B 2.35 n/p/p+ 3″Øx381μm p- Si:B[111] 0.004-0.008 P/E 140±10 n- Si:P 33.6 n/p/p+ 3″Øx381μm n- Si:As[111-4°] 0.001-0.005 P/E 5.5 n- Si:P 0.31 – 0.33 n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 37.5 n- Si:P 0.6±10% n/n+ 3″Øx525μm n- Si:P[111] 0.001-0.005 P/E 4.5 n- Si:P 1.1 – 1.4 n/n+, Sealed in cassettes of 24 wafers 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 5.5 n- Si:P 1.06±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 11 n- Si:P 17.5±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.7±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 2.1±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.3±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.8±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 1.3±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 12 n- Si:P 16±10% n/n+ 3″Øx381μm n- Si:As[111] 0.001-0.005 P/E 13 n- Si:P 1.35±10% n/n+ 3″Øx381μm n- [...]

2019-03-08meta-author
SrTiO3 single crystal-4

PAM XIAMEN offers SrTiO3 single crystal. SrTiO3 single crystal provides a good lattice match to most of  materials with Perovskite structure.  It is an excellent substrate for epitaxial film of HTS and many oxide. It has been used widely for special optical windows and as high quality sputtering [...]

2019-05-14meta-author