PAM-XIAMEN can provide AlGaN/GaN HEMT heterostructure, like GaN on SiC HEMT wafer, for more wafer parameter please read: https://www.powerwaywafer.com/gan-wafer/gan-hemt-epitaxial-wafer.html. Based on the strong polarization-induced effect and the huge energy band shift, the interface of the III-nitride heterostructure can form a strong quantum localized high-concentration [...]
2022-07-07meta-author
High purity undoped or Intrinsic SiC Epilayer on Silicon carbide substrate(PAM-191014-SIC) are offered, its carrier concentration is extremely low(for detail data, please consult our team: [email protected]) and its resistivity is high, semi-insulating. Some researchers use its property to study color centers in wide band-gap [...]
2020-03-10meta-author
Cree Recalls 112,500 LED T8 Tube Lights in North America Over Burn Hazard
Recall date: AUGUST 25, 2016
Recall number: 16-252
Recall Summary
Name of product:
Cree® LED T8 Replacement Lamps
Hazard:
The recalled lamps can overheat and melt, posing a burn hazard.
Cree LED tube lights being recalled in North America. (Cree/LEDinside)
Remedy:
View Details
Refund
Consumer [...]
2016-08-30meta-author
Dependence of arsenic antisite defect concentration and two dimensional growth mode on LT GaAs growth conditions
We investigated the dependence of Arsenic antisite defect concentration and that of epitaxial thickness (tepi), above which a transition to three dimensional growth appears, on the growth conditions of [...]
PAM XIAMEN offers 8″ Prime Silicon Wafer.
Silicon wafers, per SEMI Prime,
P/E 8″(200.0±0.2mm) Ø×1,000±25µm,
p-type Si:B[111]±0.5°, Ro: <100 Ohmcm,
TTV<6µm, Bow<60µm, Warp<60µm,
One-side-polished, Particles: ≤[email protected]≥0.3µm,
Back-side etched, SEMI notch,
Sealed in Empak or equivalent cassette.
For more information, please visit our website: https://www.powerwaywafer.com, [...]
2019-07-02meta-author
PAM-XIAMEN offers (10-11) Plane N-GaN Freestanding GaN Substrate:
Item
PAM-FS-GAN(10-11)-N
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(10-11) plane off angle toward A-axis 0 ±0.5°
(10-11) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at [email protected] and [email protected]
2020-08-20meta-author