Enhancement of minority carrier lifetimes in n- and p-type silicon wafers using silver nanoparticle layers

The quasi-steady state photo conductance technique is employed to probe effective minority carrier lifetime (τ eff) modifications after integrating silver nanoparticles (Ag NPs) on n-type and p-type silicon wafers with a native oxide surface. Our observations reveal that τ eff modification is very sensitive to Ag NPs size, surface coverage and also wafer type. With an optimized Ag NPs, τ eff is enhanced from 4.4 μs to 10 μs for a p-type silicon wafer, and from 8.1 μs to 14 μs for an n-type silicon wafer. We attributed the enhancement in τ eff to the partial field effect passivation of the silicon surface by the surface plasmon resonance near-fields of Ag NPs after excitation. Our investigations demonstrate that an optimized Ag NPs on any silicon wafer with a native oxide layer can work as both a light trapping and a surface-passivating layer.

source:iopscience

For more information, please visit our website: https://www.powerwaywafer.com,

send us email at [email protected] or [email protected].

2018-11-21

Related Posts

DyScO3/GdScO3//TbScO3 crystal

PAM XIAMEN offers DyScO3/GdScO3//TbScO3 crystal. Crystal Structure /Lattice Constant(A) MP oC Density, g/cm3 Growth Tech DyScO3 Orthorombic a=5.44 b=5.71 c=7.89 2127 6.9 CZ GdScO3 Orthorombic a=5.45 b=5.75 c=7.93 2127 6.6 CZ TbScO3 Orthorhombic, a = 5.4543, b = 5.7233 c = 7.9147 2127 6.6 CZ DyScO3 (110) 5x5x0.5mm 1sp (PAM210322-DYSCO3) DyScO3 (110) 5x5x0.5mm 1sp” DyScO3 (110) 5x5x0.5mm 2sp DyScO3 (110) 10x10x0.5mm 1sp DyScO3 (110) 10x10x0.5mm 2sp DyScO3 (001) 10x10x0.5mm 1sp [...]

2019-05-20meta-author

6″ FZ Silicon Wafer-7

PAM XIAMEN offers 6″ FZ Silicon Wafer-7 GQ56b Silicon wafers, per SEMI Prime, P/P 6″Ø×675±10µm, FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 10,000 Ohmcm, Both-sides-polished, One SEMI Flat Sealed in Empak or equivalent cassette, MCC Lifetime>1000µs For more information, send us email at [email protected] and [email protected]

2021-03-19meta-author

2″ Silicon Wafer-5

PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 2″ 250 P/P 0.01-0.02 SEMI Prime, TTV<5μm p-type Si:B [100] 2″ 300 P/E 0.01-0.02 SEMI, p-type Si:B [100] 2″ 500 P/P 0.01-0.02 SEMI Prime, p-type Si:B [100] 2″ 600 P/E 0.01-0.05 SEMI Prime, p-type Si:B [100] 2″ 525 P/E 0.005-0.020 SEMI Prime, , TTV<5μm p-type Si:B [100] 2″ 300 P/E 0.001-0.005 SEMI Prime, p-type Si:B [100] 2″ 300 P/E 0.001-0.005 SEMI Prime, p-type Si:B [100] 2″ 300 P/E 0.001-0.005 SEMI Prime, p-type Si:B [100] 2″ P/E SEMI Prime p-type Si:B [100] 2″ 525 P/P <0.01 {0.0076-0.0078} SEMI Prime, , in hard cassettes of 5 wafers. p-type Si:B [111] ±0.5° 2″ 275 P/E 1-30 SEMI Prime p-type Si:B [111] ±0.5° 2″ 330 P/E 1-20 SEMI Prime p-type Si:B [111] ±0.5° 2″ 330 P/E 1-20 SEMI Prime p-type [...]

2019-03-07meta-author

3″ Silicon Wafer-6

PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [5,5,12] ±0.5° 3″ 380 P/E 1-10 SEMI Prime p-type Si:B [211] ±0.5° 3″ 525 P/P >10 SEMI Prime p-type Si:B [211] ±0.5° 3″ 525 P/E >10 SEMI Prime p-type Si:B [111-28° towards[001]] ±0.5° 3″ 400 P/E >20 SEMI TEST (Half of wafers polished on wrong side, some have etch patterns), Primary Flat @ <112>, hard cst p-type Si:B [111-4°] ±0.5° 3″ 380 P/E 8-12 SEMI Prime p-type Si:B [111-4°] ±0.5° 3″ 380 P/E 8-12 SEMI Prime p-type Si:B [111] ±0.5° 3″ 508 E/E 0.792-1.008 SEMI TES, TTV<2μm, Epak cst p-type Si:B [111-4°] [...]

2019-03-06meta-author

Why can LED wafer on PSS be Used in Laser Liftoff?

Some customers worry about that when they transfer LED onto other substrates using laser liftoff, these patterns of LED wafer on patterned sapphire substrate. PSS will scatter the laser. In fact, some of our customers also use 4” epi wafers on PSS for LLO, [...]

2021-03-22meta-author

Laser recovery of grinding-induced subsurface damage in the edge and notch of a single-crystal silicon wafer

The edges and notches of silicon wafers are usually machined by diamond grinding, and the grinding-induced subsurface damage causes wafer breakage and particle contamination problems. However, the edge and notch surfaces have large curvature and sharp corners, thus it is difficult to be finished [...]

2019-07-22meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.