Optical characterization of InAs film grown on SnO2 substrate by the electrodeposition technique Indium arsenide films have been grown by an electrodeposition process at low temperature on a tin oxide (SnO2) substrate. X-ray diffraction studies showed that the as-grown films are poorly crystallized and heat treatment improved the crystallinity of [...]
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of Laser diode epitaxial structure and other related products and services announced the new availability of size 3” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN‘s product line. Dr. Shaka, said, “We are pleased to [...]
PAM-XIAMEN, a wafer substrate supplier, offers epi ready substrate wafer as follows: Wikipedia: Substrate is a solid (usually planar) substance onto which a layer of another substance is applied, and to which that second substance adheres. In solid-state electronics, this term refers to a thin slice of material such as silicon, [...]
‘Optically pumped’ laser closer to improving processing speed of sensors Researchers are developing a new material that could improve processing speed of sensors and other electronic components. Credit: University of Arkansas Imagine creating a material for the digital information highway that allows a fast lane of laser light that zips data [...]
Abstract Nanostructured surfaces can be broadly defined as substrates in which the typical features have dimensions in the range 1–100 nm (although the upper limit of 100 nm may be relaxed to greater sizes in some cases, depending on the material and the specific property being investigated). The recent surge of interest [...]
Formation of porous structures in GaN/SiC heterostructures in light of the need for porous templates for improved GaN epitaxial growth has been studied. It has been observed that the built-in stress in the heterostructures greatly affects the process of porous structure formation. As a result, it is shown that [...]
Highlights • The temperature-dependent strengths of CVD ZnS were obtained. • The thermal shock behavior of infrared window was studied by finite element method. • Rapid heating thermal shock tests were conducted to validate the numerical results. Abstract The thermal shock failure has been recognized as one of key failure modes of chemical vapor deposited zinc sulfide [...]
Products Thanks to MOCVD and MBE technology,PAM-XIAMEN, a epitaxial wafer supplier, offers epitaxial wafer products, including GaN epitaxial wafer, GaAs epitaxial wafer, SiC epitaxial wafer, InP epitaxial wafer, and now we give a brief introduction as follows: 1)GaN epitaxial growth on sapphire template; Conduction Type: Si doped (N+) Thickness:4um,20um,30um,50um,100um Orientation: c-axis [...]
This paper presents the experimentally obtained gauge factor (GF) of 4H-SiC piezoresistors, fabricated out of the n-type epitaxial layer and characterized on millimeter-size SiC cantilever beams at room temperature. It was found that the GF is dependent on the piezoresistor’s length and width. Piezoresistors narrower than approximately 30 µm showed [...]
We designed and fabricated AlGaN/GaN high-electron-mobility transistors (HEMTs) employing both a floating gate (FG) and a field plate (FP), which increase the breakdown voltage of AlGaN/GaN HEMTs significantly without sacrificing forward electric characteristics. The electric field strength at the gate–drain region of the proposed AlGaN/GaN HEMT was reduced successfully due to [...]
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