News

What is GaAs?

What is GaAs?   GaAs(Gallium arsenide) is a compound semiconductor material,a mixture of two elements, gallium (Ga) and arsenic (As). The uses of Gallium arsenide are varied and include being used in LED/LD, field-effect transistors (FETs), and integrated circuits (ICs).   GaAs Basic Parameters at 300K Crystal structure Zinc Blende Group of symmetry Td2-F43m Number of atoms in 1 [...]

2012-05-14 Read more...

PAM-XIAMEN has announced 6″GaAs epi wafer on mass production

PAM-XIAMEN  has announced his 6” GaAs epi wafer are on mass production for PHEMTs and MHEMTs (Pseudomorphic and metamorphic high-electron mobility transistors) ,HBTs(Heterojunction bipolar transistors), MESFETs (Metal-semiconductor field effect transistors) and other device,grown by molecular beam epitaxy (MBE) systems. The GaAs-pHEMT is widely used for high frequency switching devices in wireless systems like [...]

2012-05-11 Read more...

Osram Laboratory Reports 142 lm/W Efficiency Record for Warm

Osram Laboratory Reports 142 lm/W Efficiency Record for Warm White LED Light Source March 15, 2011…Osram Opto Semiconductors reports that it has set a new laboratory record of 142 lm/W for the efficiency of a warm white LED light source. The LED with a correlated color temperature (CCT) of 2755 [...]

2012-03-06 Read more...

2″ Free Standing Gallium Nitride (GaN) Substrate

2″ Free Standing Gallium Nitride (GaN) Substrate   PAM-XIAMEN,a leading supplier of GaN serie,is pleased to announce n+ c-plane 2″ SIZE Free standing gallium nitride (GaN) substrate with low Marco Defect Density <=2cm-2 are on mass production. (more…)

2012-03-06 Read more...

20 years and counting for the GaN LED

A commercially viable GaN LED was an incredibly hard nut to crack that required the development of a buffer layer and a novel approach to p-type doping. But 20 years ago it all came together. Richard Stevenson looks back at the device’s birth. (more…)

2012-03-06 Read more...

Graphene Wafer

The wafer of graphene for sale from PAM-XIAMEN are Monolayer Graphene on PET film, Monolayer Graphene on SiO2/Silicon, Bilayer Graphene on SiO2/Silicon, Monolayer Graphene on Copper, and graphene wafer growth on nickel for researches and industry. Graphene is a new semiconductor material with a single-layer two-dimensional honeycomb lattice structure piled up by carbon atoms, which is connected by sp² [...]

2012-03-06 , Read more...

Silicon Wafer

Silicon Wafer Si wafer Substrate -Silicon Quantity Material Orientation. Diameter Thickness Polish Resistivity Type Dopant Nc Mobility EPD PCS (mm) (μm) Ω·cm 　 a/cm3 cm2/Vs /cm2 1-100 Si N/A 25.4 280 SSP 1-100 P/b N/A N/A N/A 1-100 Si N/A 25.4 280 SSP 1-100 P/b (1-200)E16 N/A N/A 1-100 Si (100) 25.4 525 N/A <0.005 N/A N/A N/A N/A 1-100 Si (100) 25.4 525±25 SSP <0.005 N/A N/A N/A N/A 1-100 Si with Oxide layer (100) 25.4 525±25 SSP <0.005 N/A N/A N/A N/A 1-100 Si (100) 25.4 350-500 SSP 1~10 N/A N/A N/A N/A 1-100 Si (100) 25.4 400±25 P/E <0.05 P/ N/A N/A N/A 1-100 Si (100) 50.4 400±25 P/E <0.05 P/ N/A N/A N/A 1-100 p-Si with 90 nm SiO2 (100) 50.4 500±25 P/E <0.05 P/ N/A N/A N/A 1-100 n-Si with 90 nm SiO2 (100) 50.4 500±25 P/E <0.05 N/ N/A N/A N/A 1-100 p-Si with 285 nm SiO2 (100) 50.4 500±25 P/E <0.05 N/ N/A N/A N/A 1-100 n-Si with 285 nm SiO2 (100) 50.4 500±25 P/E <0.05 N/ N/A N/A N/A 1-100 Si with electrodes (100) 50.8 400 N/A <0.05 N/p 1E14-1E15 N/A N/A 1-100 Si (100) 50.8 275 SSP 1~10 N/A N/A N/A N/A 1-100 Si (100) 50.8 275±25 SSP 1~10 N/p N/A N/A N/A 1-100 Si (111) 50.8 350±15 SSP >10000 N/A N/A N/A N/A 1-100 Si (100) 50.8 430±15 SSP 5000-8000 N/A N/A N/A N/A 1-100 Si (111) 50.8 410±15 SSP 1~20 N/A N/A N/A N/A 1-100 Si (111) 50.8 400-500 SSP >5000 N/A N/A N/A N/A 1-100 Si (100) 50.8 525±25 SSP 1~50 N/A N/A N/A N/A 1-100 Si (100) 50.8 500±25 SSP 1~10 N  P N/A N/A N/A 1-100 Si (100) 50.8 500±25 P/P >700 P/ N/A N/A N/A 1-100 Si (100) 76.2 400±25 P/E <0.05 P/ N/A N/A N/A 1-100 p-Si with 90 nm SiO2 (100) 76.2 500±25 P/E <0.05 P/ N/A N/A N/A 1-100 n-Si with 90 nm SiO2 (100) 76.2 500±25 P/E <0.05 N/ N/A N/A N/A 1-100 p-Si with 285 nm SiO2 (100) 76.2 500±25 P/E <0.05 N/ N/A N/A N/A 1-100 n-Si with 285 nm SiO2 (100) 76.2 500±25 P/E <0.05 N/ N/A N/A N/A 1-100 Si (100) 100 625 SSP >10000 N/A N/A N/A N/A 1-100 Si (100) 100 525 SSP N/A N/P N/A N/A N/A 1-100 Si (100) 100 320 SSP >2500ohm·cm P/b N/A N/A N/A 1-100 Si (100) 100 N/A SSP 10~30 N/p N/A N/A N/A 1-100 Si (100) 100 505±25 SSP 0.005-0.20 N/P-doped N/A N/A N/A 1-100 Si (100) 100 381 SSP 0.005-0.20 N/P-doped N/A N/A N/A 1-100 Si (100) 100 525 DSP 1-100 N/A N/A N/A N/A 1-100 Si (100) 100 525 DSP 1-100 N/A N/A N/A N/A 1-100 Si (100) 100 625±25 SSP 0.001-0.004 N/A N/A N/A N/A 1-100 Si with Oxide layer 3000A (100) 100 675±25 SSP 0.001-0.004 N/A N/A N/A N/A 1-100 Si (100) 100 625±25 SSP 0.001-0.004 N/A N/A N/A N/A 1-100 Si (100) 100 N/A SSP N/A P/b N/A N/A N/A 1-100 Si (100) 100 500±25 SSP 1~25 N/A N/A N/A N/A 1-100 Si (100) 100 500 SSP 1~10 P/ N/A N/A N/A 1-100 Si (100) 100 500±25 P/E 1-10 N/ N/A N/A N/A 1-100 Si (100) 100 500/525±25 P/P 1-10 N/ N/A N/A N/A 1-100 Si (100) 100 500/525±25 N/A N/A N/A N/A N/A N/A 1-100 Si (100) 100 500±25 P/P >700 P/ N/A N/A N/A 1-100 Si (100) 150 675±25 N/A  0.001-0.004 P/b N/A N/A N/A 1-100 Si (100) 150 675±25 N/A  0.001-0.004 P/b N/A N/A N/A 1-100 Si (100)/(111) 150 550~650 DSP N/A N/A N/A N/A N/A 1-100 Si (100)/(111) 150 600-700 SSP <0.5 N/A N/A N/A N/A 1-100 Si (111) 150 400±25 DSP <50 N/ N/A N/A N/A 1-100 Si (100) 150 545 P/E 1-3 N/ N/A N/A N/A 1-100 Si (100) 200 725±25 SSP 1~25 P/ N/A N/A N/A As a [...]

2012-03-06 Read more...

Graphene Chemical Vapor Deposition System

We provide series of grapheme 2D systems for grapheme,CNT and other 2D material growth. and offer the most efficient Chemical Vapor Deposition (CVD) system for graphene growth (is compatible for both LPCVD and APCVD growth).  We also can adjust each of these standard systems can be customized to the [...]

2012-03-06 Read more...