On-Demand Generation of Single Silicon Vacancy Defects in Silicon Carbide

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Article title:On-Demand Generation of Single Silicon Vacancy Defects in Silicon Carbide

Published by:

Jun-Feng Wang ; Qiang Li ; Fei-Fei Yan ; He Liu ; Guo-Ping Guo ; Wei-Ping Zhang ; Xiong Zhou ; Li-Ping Guo ; Zhi-Hai Lin ; Jin-Ming Cui ; Xiao-Ye Xu ; Jin-Shi Xu ; Chuan-Feng Li ; Guang-Can Guo.

1.CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
2.CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
3.Accelerator Laboratory, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, People’s Republic of China
Picture of SiC wafer:









Defects in silicon carbide have been explored as promising spin systems in quantum technologies. However, for practical quantum metrology and quantum communication, it is critical to achieve on-demand single spin-defect generation. In this work, we present the generation and characterization of shallow silicon vacancies in silicon carbide by using different implanted ions and annealing conditions. The conversion efficiency of a silicon vacancy of helium ions is shown to be higher than that by carbon and hydrogen ions in a wide implanted fluence range. Furthermore, after optimizing the annealing conditions, the conversion efficiency can be increased more than 2 times. Due to the high density of the generated ensemble defects, the sensitivity of sensing a static magnetic field can be reached as high as , which is about 9 times smaller than previous results. By carefully optimizing implanted conditions, we further show that a single silicon vacancy array can be generated with a high conversion efficiency of about 80%. The results pave the way for using an on-demand-generated single silicon vacancy for quantum information processing and quantum photonics.


Subject(s):silicon carbide ; silicon vacancy ; implantation ; magnetic sensing ; single-photon sources.

Article abstract for Using Wafer from Xiamen Powerway Advanced Material Co. Ltd. (PAM-XIAMEN) or Powerway Wafer Co.,Limited

“… (4° off axis, thickness is about 7 μm, nitrogen doped and concentration is 5.2 ‰ 1015 cm-3,Xiamen powerway advanced material,) sample20,21. The energy gap of the 4H- SiC is about 3.23 eV, and the negative VSi defects fermi level is about 1.5-2.3 eV24. In …”


About Xiamen Powerway Advanced Material Co., Ltd

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC wafer in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC wafer processing technology. We provide custom thin film (silicon carbide)SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect.

PAM-XIAMEN also offer GaAs/InP and GaN material from wafer substrate to epitaxial growth.

Powerway Wafer Co.,Limited is a sub company of Xiamen Powerway Advanced Material Co., Ltd specialize in dealing with overseas orders.

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