Search Results - sic

InGaAs/InP epi wafer for PIN

PAM-XIAMEN can offer 2” InGaAs/InP epi wafer for PIN as follows. InGaAs is the compound of InAs and GaAs. In the periodic table of chemical elements, In and Ga are elements of the third group, and As is the fifth group element. The properties of InGaAs are between the properties of [...]

2013-10-15 Read more...

Gas filled prototype of a CdZnTe pixel detector

Gas filled prototype of a CdZnTe pixel detector   CdZnTe pixel structures are currently the most promising detectors for the focal planes of hard X-ray telescopes, for astronomical observation in the range 5–100 keV. In Sharma et al. (Proc. SPIE 3765 (1999) 822) and Ramsey et al. (Nucl. Instrum. Methods A 458 [...]

2013-10-09 Read more...

Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers

Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and [...]

2013-09-25 , , , Read more...

Growth of CdZnTe crystals by the traveling heater method

Effects of mosaic structure on the physical properties of CdZnTe crystals   Mosaic structure in CdZnTe crystals was identified by using scanning electron microscopy (SEM), then the effects of mosaic structure on the physical properties were studied by means of high resolution X-ray diffraction (HRXRD), I–V characterization, and Fourier transform infrared (FT-IR) measurements. [...]

2013-09-23 Read more...

Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate

Thermal oxides on the Ga-face of low defect density bulk gallium nitride (GaN) were controllably produced under varying conditions and subsequently analyzed. The thermal oxidation was performed in a dry oxygen atmosphere at different temperatures and different oxidation times. Each oxide layer was identified as the monoclinic β-Ga2O3 by [...]

2013-09-09 Read more...

Improved light output power in GaN-based vertical light-emitting diodes with p-AlInGaN/GaN superlattices

Improved light output power in GaN-based vertical light-emitting diodes with p-AlInGaN/GaN superlattices   We report the effect of p-type AlGaInN/GaN superlattices (SLs) as electron-blocking layers (EBLs) on the optical properties of vertical light-emitting diodes (VLEDs). Using p-AlGaInN/GaN SLs in VLEDs, we have achieved significant improvements in the output power and the [...]

2013-04-24 Read more...

GaN Substrates Offer High Performance At A Price

GaN Substrates Offer High Performance At A Price   GaN substrates are manufactured by only a handful of companies at prices prohibitive to volume production, but offer great potential for high-performance devices. Richard Stevenson reports.The GaN component market was worth $1.35 billion in 2003 according to market research firm Strategies Unlimited. [...]

2013-03-21 Read more...

GaN Power Electronics will top one billion dollar in revenue in a couple of years thanks to a cross-fertilization with the LED industry

GaN Power Electronics will top one billion dollar in revenue in a couple of years thanks to a cross-fertilization with the LED industry SLOW RAMP-UP BUT HUGE EXPECTATIONS The GaN power device industry has probably generated less than $2.5M revenues in 2011, as only 2 companies are selling products on the open market. [...]

2012-07-11 Read more...

PAM-XIAMEN Offers Larger Free-Standing Semi-Insulating GaN Substrates

PAM-XIAMEN Offers Larger Free-Standing Semi-Insulating GaN Substrates Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of ultra-high purity crystalline gallium nitride (GaN) and aluminum gallium nitride (AlGaN) materials and other related products and services announced the new availability of 2″ size native semi-insulating GaN (SI GaN) substrates,which is on mass production in 2011. This new product represents a natural addition [...]

2012-07-09 Read more...