Since more and more mobile phone manufacturers launch the gallium nitride fast charger, what is a GaN fast charger? A gallium nitride charger is that the core device of such a fast charger for smartphones, laptops and etc. adopts GaN FETs chip, which can be offered by [...]
2021-06-11meta-author
Heteroepitaxial growth of 3C‐SiC on Si by chemical vapor deposition has been investigated using the precursor trimethylsilane. To optimize the growth process and to obtain high growth rates, we have investigated the effect of temperature and precursor flow rate on on‐axis Si(100) and off‐axis [...]
2020-01-20meta-author
Ternary semiconductor thin films of InAsP epitaxially on InP can be offered to customers for developing a better and a more reliable distributed feedback (DFB) lasers. Our InAsP layer has excellent properties, the size of the InAsP layer can be controlled by the height [...]
2017-08-16meta-author
Silicon carbide of Ni/6H-SiC and Ti/4H-SiC type Schottky diode current-voltage characteristics modelling
On the base of the physical analytical models based on Poisson’s equation, drift–diffusion and continuity equations the forward current–voltage characteristics of 6H-SiC and 4H-SiC type Schottky diode with Ni and Ti Schottky contact [...]
2018-04-19meta-author
PAM XIAMEN offers Cu – single crystal Substrates & Polycrystalline & Copper Foam.
1. General Properties for Single Crystal Copper
Symbol : Cu
Atomic Number: 29
Atomic Weight: 63.546(3
Crystal structure: FCC -Face centered cubic
Density: 8.96 g/cm3
Melting Point: 1357.77 K (1084.62 °C, 1984.32 °F) [...]
2019-05-08meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[110] ±0.5°
2″
279
P/E
FZ >1,000
p-type Si:B
[100]
2″
300
P/E
FZ 2,800-3,300
SEMI Prime, TTV<7μm
p-type Si:B
[100]
2″
300
P/E
FZ 2,800-3,300
SEMI Prime, TTV<7μm
p-type Si:B
[100]
2″
300
P/E
FZ 2,800-3,300
SEMI Prime, TTV<7μm
p-type Si:B
[111] ±0.5°
2″
500
P/P
FZ 5,000-6,500
SEMI Test (in unsealed cassette)
p-type Si:B
[111] ±0.5°
2″
275
P/E
FZ 3,000-5,000
SEMI Prime, Lifetime>2,000μs, in hard cassettes of 5 wafers
p-type Si:B
[111-7° towards[110]] ±0.5°
2″
279
P/P
FZ >2,000
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
331
P/E
FZ 2,000-5,000
SEMI, Soft cst
p-type Si:B
[111] ±0.5°
2″
331
P/E
FZ 2,000-5,000
SEMI TEST (Scratched), Soft cst
p-type Si:B
[111] ±0.5°
2″
331
P/E
FZ 2,000-5,000
SEMI [...]
2019-03-07meta-author