PAM-XIAMEN Offers InAsP layer

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InAsP layer and other related products and services announced the new availability of size 2″-4”  is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.
Dr. Shaka, said, “We are pleased to offer InAsP layer to our customers including many who are developing better and more reliable for the buried grating of distributed feedback (DFB) lasers. Our InAsP layer has excellent properties, the size of the InAsP layer can be controlled by the height of the corrugation, and the arsenic composition in the InAsP layer can be controlled by the AsH/sub 3/ partial pressure. The results of TEM, EDS and PL show that InP is suitable as the buffer layer between the InAsP layer and MQW active layer. Fabricated 1.3 /spl mu/m DFB lasers which have an InAsP layer as an absorptive grating have shown low threshold current and high slope efficiency from -40-+85/spl deg/C, and high reliability has been demonstrated. The availability improve boule growth and wafering processes.” and “Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our InAsP layer are natural by products of our ongoing efforts,  currently we are devoted to continuously develop more reliable products.”
PAM-XIAMEN’s improved InAsP product line has benefited from strong tech. support from Native University and Laboratory Center.
Now it shows an example as follows:

About Xiamen Powerway Advanced Material Co., Ltd
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
About InAsP
Crystal growth and material characterization of InAsP strained quantum-well structures and its application to 1.3 um lasers were investigated in term of threshold current reduction and high temperature operation. Layer thickness fluctuation caused by the large elastic strain can be eliminated by decreasing growth temperature. Although temperature dependence of the threshold current is expected to be improved by large conduction band discontinuity of InAsP, small number of well due to the critical layer thickness compensates for the improvement. To avoid the problem, tensile-strained InGaP barriers as well as very thin InP intermediate layers were applied. The device with InAsP/InP/InGaP/InP triple quantum well as an active region showed low threshold current density of 300 A/ cm2 and the reduction of threshold current density of the device is significant at shorter cavity length region. It is confirmed that InGaP barrier, instead of conventional GaInAsP, is effective to carrier confinement if the active region has small number of wells. The highest characteristic temperature T 0 of 117 K were also reported in the similar device structure. Besides these excellent performance, good aging characteristic is vertified. Very small changing in operating current to obtain 10mW at 50 is confirmed for both strained and strain-compensated InAsP/GaInAsP lasers.
Q: Graded InAsP buffer layer (typ. 1-5um), n+ doped, what is the doping concentration.
A: 0.1-1.0e18   

Q: InGaAs layer, 2-3um – 1.9um cutoff  what is the exact thickness? 
A: 3.0um   

Q: InAsP layer, 0.5-1um – lattice matched to the InGaAs layer 
A: InAsP buffer layer has as main function to reduce the dislocation density in the material, 
    thickness should follow from your internal work    

Q: What is the roughness of surface required? 
A: We never characterized this material towards roughness since it has cross-hatch; 
    electrical characteristics of the processed material towards PIN diodes (dark current) 
    is much more important   our roughness should be on about Ra=10nm

Q: What is the EPD? EPD <=500/cm2     
A: The substrate EPD should be <=500/cm2, EPD of total wafer <=10^6/cm2

Q: What is the quantity? 
A: For evaluation: 2 or 3, after qualification: 5-10    

Q: Could you please advise the substrate orientation?
A: The similar remark as for the InAsP buffer layer and roughness; 
    another supplier was using (100)2deg off <110>+/-0.1,   
    our substrate orientation should be (100)+/-0.5deg.
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