Helium implantation-induced layer splitting of InP in combination with direct wafer bonding was utilized to achieve low temperature layer transfer of InP onto Si(1 0 0) substrates. InP(1 0 0) wafers with 4 inch diameter were implanted by 100 keV helium ions with a dose of 5 × 1016 cm−2. Then [...]
2019-12-09meta-author
PAM XIAMEN offers 2″CZ Prime Silicon Wafer-3
Silicon wafer
dia 2 inch
thickness 280 um
P type boron doped or N doped
resistivity- 1-10 ohm cm
orientation-100
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-12meta-author
Highlights
•Aberration-corrected TEM and EELS reveal structural and elemental profiles across GaAs/Si bond interfaces in wafer-bonded GaInP/GaAs/Si – multi-junction solar cells.
•Fluctuations in elemental concentration in nanometer-thick amorphous interface layers, including the disrubutions of light elements, are measured using EELS.
•The projected widths of the interface layers [...]
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InP substrate and other related products and services, can offer InP substrate for Fiber optics network components. Our monocrystalline InP crystal substrate has excellent properties, a series of doping experiments have determined the effective segregation coefficient [...]
2017-08-18meta-author
Single crystal 3C-SiC substrate can be supplied with specifications as: https://www.powerwaywafer.com/3c-sic-wafer.html.
Silicon carbide (SiC) has excellent properties such as wide bandgap, high breakdown field strength, high saturation electron drift rate, and high thermal conductivity, and has important applications in fields such as new energy vehicles, photovoltaics, [...]
2024-04-26meta-author
PAM XIAMEN offers Single Crystal Quartz Wafers.
All single crystal quartz should be grown from one special seed.
And the different cut type will cause the different seed location.
One type is inside the wafer names “with seed”, the other type is not inside the wafers, so [...]
2019-02-27meta-author