Formation of porous structures in GaN/SiC heterostructures in light of the need for porous templates for improved GaN epitaxial growth has been studied. It has been observed that the built-in stress in the heterostructures greatly affects the process of porous structure formation. As a [...]
2018-01-30meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm.
PRIME WAFERS SILICIUM CZ
DIAMETER 4 inch (100mm+/-0.5mm)
ORIENTATION <1-0-0> +/-1°
THICKNESS : 525µm +/-25µm
SSP
TTV < 10µm – BOW < 40µm
FLAT : 32.5mm
TYPE P
RESISTIVITY : 8 – [...]
2019-07-05meta-author
PAM XIAMEN offers 5″ FZ Silicon wafers
Silicon wafers, per SEMI Prime,
P/P 5″Ø×240±10µm,
FZ p-type Si:B[100]±0.5°,
Ro=(240-280)Ohmcm,
TTV<5µm, Bow<25µm, Warp<25µm,
Both-sides-polished,
SEMI Flat (one),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1000µs.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-19meta-author
PAM-XIAMEN offers silicon ingot with FZ Intrinsic undoped, MCC lifetime (Minority Charge Carrier Lifetime) more than 1000Ωcm.
Silicon Ingot, FZ intrinsic undoped, MCC lifetime
An intrinsic(pure) semiconductor, also called an undoped semiconductor or i-type semiconductor,
is a pure semiconductor without any significant dopant species present. The number of [...]
2019-03-15meta-author
MPC-32 is a multi-pixel photon counting module. It can convert consecutive X-ray into digital signal in different energy region. It can reduce noise through setting electronic threshold value, thereafter reduce the influence of noise to image. Compared with traditional pseudo-dual energy, the five energy [...]
2019-04-24meta-author
PAM XIAMEN offers InSb Wafer.
InSb Ge-doped
InSb (100) 10x10x 0.45 mm, P type, Ge doped, 1 side polished
InSb (100) 5x5x 0.45 mm, P type, Ge doped, 1 side polished-1
InSb (100) 2″ dia x 0.45 mm, P type, Ge doped , 1 [...]
2019-05-07meta-author