PAM XIAMEN offers 2 inch GaN (Gallium Nitride) HEMT Epitaxial Wafers on different substrates such as silicon substrate, sapphire substrate, silicon carbide (SiC) substrate. This GaN epitaxial wafer is for high-electron-mobility transistors (HEMT).
We sell directly from the factory, and therefore can offer the best prices on the market for high [...]
2019-03-11meta-author
Silicon full wafer bonding with atomic layer deposited titanium dioxide and aluminum oxide intermediate films
Silicon-on-insulator (SOI) wafers made by direct wafer bonding are widely used as starting substrates for microelectromechanical systems (MEMS) fabrication. Adding another layer next to the SiO2 SOI, or replacing it with another [...]
PAM-XIAMEN can offer AlGaAs / GaAs p-HEMT (pseudomorphic high electron mobility transistor) heterostructure epitaxial wafer grown by MBE or MOCVD process. The heterostructure has a high-mobility conduction channel formed by two-dimensional electron gas, which is an ideal material for wireless applications. The line width [...]
2021-12-07meta-author
PAM-XIAMEN offers C doped GaAs wafer, which is also called semi-insulating GaAs wafer. Undoped gallium arsenide wafer is applied to the field of microelectronics and mainly used to make radio frequency (RF) power devices. GaAs single crystal growth methods include VGF, VB, and LEC.
No1. C [...]
2020-04-03meta-author
PAM XIAMEN offers GaP Substrates (111) .
GaP Wafer, Undoped (111) 10x10x0.35 mm, 2sp
GaP Wafer, Undoped (111) 10x10x0.5 mm, 2sp
GaP Wafer, S doped (111) 2″x0.5 mm, 2sp
GaP wafer, S doped, (111) orientation, 2″ dia x 0.5mm, 1sp
GaP Wafer, undoped (111) [...]
2019-04-22meta-author
Unusual defects, generated by wafer sawing: Diagnosis, mechanisms and how to distinguish from related failures
In the wafer sawing process, unusual failures were observed and their root causes have been investigated. Besides classical and well-known failures, the following failure mechanisms were found. Surface-ESD (ESDFOS), caused [...]