PAM XIAMEN offers MgO single crystal substrate.
MgO is an excellent single crystal substrate for thin films of Ferro magnetic, Photo-electronic and high Tc superconductor materials. PAM XIAMEN uses a special arc melting method to grow high purity MgO crystal in sizes up to [...]
2019-05-13meta-author
PAM XIAMEN offers (111) Silicon Wafers.
If you don’t see what you need then please email us your specs.
Diam
(mm)
Material
Dopant
Orient.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
6″
n-type Si:P
[111] ±0.5°
300 ±15
P/P
FZ >6,000
SEMI Prime, 1Flat (57.5mm), Lifetime>1,000μs, Empak cst
7″
n-type Si:P
[111] ±0.5°
300 ±15
P/P
FZ >6,000
SEMI Prime, 1Flat (57.5mm), Lifetime>1,000μs, Empak cst
8″
Intrinsic Si:-
[111] ±0.5°
750
E/E
FZ >10,000
SEMI notch, TEST (defects, [...]
2019-02-22meta-author
Ultra High Flux 2-D CdZnTe Monolithic Detector Arrays for X-Ray Imaging Applications
The performance of 2-D CdZnTe monolithic detector arrays designed for high flux X-ray imaging applications was studied. For the first time we have obtained 5 times 106 counts/s/mm2 count-rate for aCdZnTe pixelated detector array. This count-rate is more [...]
PAM XIAMEN offers 4″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
100
N
Phos
CZ
-100
1-20
500-550
P/E/WTOx
100
N
Phos
CZ
-100
1-50
2900-3100
P/E
PRIME
100
N
Phos
CZ
-100
50-70
4850-5050
P/E
PRIME
100
N
Phos
CZ
-100
1-50
5900-6100
P/E
PRIME
100
N
Phos
CZ
-100
>10
9900-10100
P/P
PRIME
100
N
Phos
CZ
-111
1-10
4000-6000
P/E
PRIME
100
N
Phos
FZ
-111
> 20000
275-325
P/E
PRIME
100
N
Phos
FZ
-111
> 20000
275-325
P/P
PRIME
100
N
Phos
FZ
-111
2000-4000
275-325
P/P
PRIME
100
N
Phos
CZ
-111
450-500
P/P
PRIME
100
N
Phos
FZ
-111
> 20000
475-525
P/P
PRIME
100
N
As
CZ
-111
.001-.005
500-550
P/E
PRIME
100
N
Phos
CZ
-111
1-20
500-550
P/E
PRIME
100
N
Phos
FZ
-111
2000-4000
500-550
P/P
PRIME
100
N
Phos
CZ
-111
1-20
4800-5200
P/E
PRIME
100
N
Phos
CZ
-111
1-3
11300-11500
P/E
PRIME
100
N
Phos
CZ
-110
450-500
P/P
PRIME
100
N
Phos
CZ
-110
1-20
500-550
P/E
PRIME
100
P
Boron
CZ
(100)-4
0.01-0.02
175-225
P/P
PRIME
100
P
Boron
CZ
(100)-4
0.01-0.02
200-250
P/E
PRIME
100
P
Boron
CZ
(100)-4
0.01-0.02
325-375
P/P
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth [...]
2019-03-04meta-author
PAM-XIAMEN can offer metallized diamond heat sink for solving the poor bonding force between diamond and the matrix and the early falls of the diamond due to high interface energy with most metals, ceramics, etc. A metallized diamond heat sink compound refers to plating metal on [...]
2021-06-11meta-author
InGaSb Film on GaAs Substrate
PAM-XIAMEN can offer InGaSb material substrate, which can be used for InGaSb photodetectors, InGaSb/GaAs quantum dots (QDs), InGaSb-on-insulator for p-MOSFET, and InGaSb/InAs superlattice materials for infrared photodiodes in the very long-wavelength infrared (VLWIR) range
It can be grown on GaAs substrate, [...]
2020-05-15meta-author