Silicon full wafer bonding with atomic layer deposited titanium dioxide and aluminum oxide intermediate films

Silicon full wafer bonding with atomic layer deposited titanium dioxide and aluminum oxide intermediate films

Silicon-on-insulator (SOI) wafers made by direct wafer bonding are widely used as starting substrates for microelectromechanical systems (MEMS) fabrication. Adding another layer next to the SiO₂ SOI, or replacing it with another material, will be a way to tailor the SOI wafers further. Atomic layer deposition (ALD) can be used to deposit pinhole-free nanometer-thin conformal and smooth inorganic films at low temperatures, making it of interest for many applications in MEMS. In this work, the direct wafer bonding of ALD TiO₂, and Al₂O₃ for reference, is investigated, eventually in order to fabricate SOI wafers with buried ALD oxides. Finding suitable process conditions for TiO₂ bonding was challenging: bonding could not be made for TiO₂ deposited directly on SiO₂ or Si, and annealing at 1100 °C gave non-continuous Ti-containing layers. Using a 2-nm Al₂O₃ under-layer and annealing at 700 °C gave void-free bonding with continuous TiO₂ and a bond strength of approximately 1600 mJ/m², enabling the fabrication of SOI wafers with buried TiO₂.

Keywords

- Atomic layer deposition;
- ALD;
- Wafer bonding;
- Silicon-on-insulator;
- SOI;
- Al₂O₃;
- TiO₂

Source:Sciencedirect

For more information, please visit our website:www.powerwaywafer.com, send us email at [email protected]

or [email protected]

2014-10-13 semiconductor wafer, semiconductor wafer manufa, Silicon Wafer

Related Posts

6″ Monocrystalline silicon wafers with insulating oxide

PAM XIAMEN offers 6″ Monocrystalline silicon wafers with insulating oxide 6″ Monocrystalline silicon wafers with insulating oxide Polishing: one-sided for microelectronics Thickness: 675 +/- 20 microns TTV <15 μm, Warping <35 μm P type Orientation <100> The thickness of the insulating oxide layer is 300 nm Resistance of the base plate ≥ 10 [...]

2020-04-15meta-author

YIG single crystal substrate – Can’t Offer Temporarily

PAM XIAMEN offers YIG single crystal substrate. YIG single crystal substrate, one side polished, (111), 5 mm dia. x 0.5 mm YIG single crystal substrate, two sides polished, (111), 5 mm dia. x 0.35 mm Due to the rapid changes in the semiconductor wafer [...]

2019-05-21meta-author

100mm (4 Inch) Silicon Wafers-2

PAM XIAMEN offers 100mm Si wafers. Please send us email at [email protected] if you need other specs and quantity. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2383 n–type Si:P [111] ±0.5° 4″ 630 P/G FZ >7,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs, Back–side Fine Ground PAM2384 n–type Si:P [111] ±0.5° 4″ 675 P/E FZ >7,000 SEMI, 1Flat, Lifetime>1,600μs, in Empak cassettes of 6 and 8 wafers PAM2385 n–type Si:P [111] ±0.5° 4″ 675 P/E FZ [...]

2019-02-19meta-author

6″ FZ Silicon Wafer-6

PAM XIAMEN offers 6″ FZ Silicon Wafer-6 N Type/Phosphorus doped Orientation (111) Thickness 400±10μm Resistivity 2000-5000Ωcm Flat one 47.5 ± 2.5, <110> ±1° TTV≤15μm Bow/Warp ≤20μm FLATNESS(FPD)≤5μm Front Side: Chemical Mechanical Polished Back side: Damaged, with SiO2/Al2O3 Particle ≤10 @≥0.3㎛ For more information, send us email at [email protected] and [email protected]

2021-03-18meta-author

Bulk GaN cost to fall 60% to $730 for 2″ substrate by 2020

Bulk GaN cost to fall 60% to $730 for 2″ substrate by 2020 Wide-bandgap semiconductor materials such as gallium nitride (GaN) offer far higher performance than traditional silicon but cost significantly more. However, by 2020 GaN costs will drop enough for it to become competitive [...]

2012-11-09meta-author

Ceramic ALN SUBSTRATE-1

PAM XIAMEN offers Ceramic ALN SUBSTRATE. 100X100 Thickness 0.5±0.03mm Item Unit Value Test Standard 1）Colour —- Gray 3.2 2）Density g/cm³ ≥3.33 GB/T 2413 3）Thermal Conductivity 20℃，W/(m·K) ≥170 GB/T 5598 4）Dielectric Constant 1MHz 8~10 GB/T 5594.4 5）Dielectric Strength KV/mm ≥17 GB/T 5593 6）Flexural Strength MPa ≥450 GB/T 5593 7）Camber Length‰ ≤2‰ 　 8）Surface roughness Ra μm 0.3~0.6 GB/T 6062 9）Water absorption % 0 GB/T 3299-1996 10)Volume resistivity 20℃，Ω.cm ≥1013 GB/T 5594.5 11）Thermal expansivity 10-6/℃ 20~300℃ 2~3 GB/T5593 300~800℃ 2.5~3.5 For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen [...]

2019-07-03meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.