PAM XIAMEN offers 2″ Diameter Wafer-2″ wafers(111). 2″ Diameter Wafer 2″ wafers(111) Ge <111> undoped Ge Wafer . Undoped, 2″ dia x 0.5 mm, 1SP (111) R >50 ohm.cm Ge Wafer . Undoped, 2″ dia x 0.5 mm, 2SP (111) R >50 Ohm.cm Ge<111> [...]
2019-04-23meta-author
Figure 1: Cross-sectional diagram of the GaN-HEMT device Fujitsu today announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75-110 GHz) transmissions. This can be used in a high-capacity wireless network with coverage over a radius of several [...]
2017-12-04meta-author
PAM XIAMEN offers LD Bare Bar for 880nm@cavity 2mm. Brand: PAM-XIAMEN Wavelength: 880nm Filling Factor: 30% Output Power: 80W Cavity Length:2mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author
This paper investigates the hydrogen plasma treatment effects on the interface of Au/CdZnTe contact. Hydrogen plasma with high energy is the smallest and lightest atomic mass, which is easy to enter into the crystal surface to fill the vacancy defects. The Au/CdZnTe samples were treated [...]
PAM XIAMEN offers Single-emitter LD Chip 830nm @2W. Brand: PAM-XIAMEN Wavelength: 830nm Stripe width: 40um Output Power: 2W Cavity Length:2mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]
2019-05-09meta-author
Photoluminescence-based material quality diagnostics in the manufacturing of CdZnTe ionizing radiation sensors A photoluminescence method was used for characterization of crystalline perfection of CdZnTe single crystals in the different stages of an up-to-date process of ionizing radiation sensor production. It was shown that the point [...]