Source: IEEE
If you need more information about SiC and GaN Wide Bandgap Device Technology ,
please visit our website: https://www.powerwaywafer.com/,
send us email a sales@powerwaywafer.com or powerwaymaterial@gmail.com
Source: IEEE
If you need more information about SiC and GaN Wide Bandgap Device Technology ,
please visit our website: https://www.powerwaywafer.com/,
send us email a sales@powerwaywafer.com or powerwaymaterial@gmail.com
PAM XIAMEN offers 3″ Silicon Wafer-18 Si wafer Orientation: (100) ± 0.5° Type: n-type Dopant: P Diameter: 76.2 ± 0.3 mm Thickness: 380 ± 25 um Disorientation: 4° to <110> Resistivity: < 0.005 Ohm*cm single side polished For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM-XIAMEN can offer 2” InGaAs/InP epi wafer for PIN as follows. InGaAs is the compound of InAs and GaAs. In the periodic table of chemical elements, In and Ga are elements of the third group, and As is the fifth group element. The properties of InGaAs [...]
PAM XIAMEN offers SrTiO3 single crystal. SrTiO3 single crystal provides a good lattice match to most of materials with Perovskite structure. It is an excellent substrate for epitaxial film of HTS and many oxide. It has been used widely for special optical windows and as high quality sputtering [...]
A phenomenon commonly encountered in grinding of silicon wafers is the grinding marks, which are difficult to remove by subsequent polishing process, and have been a great obstacle to the manufacture of silicon wafers with higher flatness. In this paper, the grinding marks formation [...]
Highlights • The high-performance MOS HEMTs have been fabricated with 20 nm SiO2used as a gate-insulator. • The piezotronic effect is introduced to effectively modulate properties of HEMTs by applying external stress on the device. • The work provides deep comprehension and potential uses of the piezotronic-effect modulation AlGaN/GaN heterostructures. Abstract The metal-oxide-semiconductor [...]
PAM-XIAMEN, a leading SiC epitaxial wafer manufacturer, can offer 4H SiC epitaxial wafers for MOS fabrication, which refer to a single crystal film(epitaxial layer) with certain requirements and the same crystal growing on a silicon carbide substrate. The SiC epitaxial wafer market size is [...]
Cookie | Duration | Description |
---|---|---|
cookielawinfo-checkbox-analytics | 11 months | This cookie is set by GDPR Cookie Consent plugin. The cookie is used to store the user consent for the cookies in the category "Analytics". |
cookielawinfo-checkbox-functional | 11 months | The cookie is set by GDPR cookie consent to record the user consent for the cookies in the category "Functional". |
cookielawinfo-checkbox-necessary | 11 months | This cookie is set by GDPR Cookie Consent plugin. The cookies is used to store the user consent for the cookies in the category "Necessary". |
cookielawinfo-checkbox-others | 11 months | This cookie is set by GDPR Cookie Consent plugin. The cookie is used to store the user consent for the cookies in the category "Other. |
cookielawinfo-checkbox-performance | 11 months | This cookie is set by GDPR Cookie Consent plugin. The cookie is used to store the user consent for the cookies in the category "Performance". |
viewed_cookie_policy | 11 months | The cookie is set by the GDPR Cookie Consent plugin and is used to store whether or not user has consented to the use of cookies. It does not store any personal data. |