There are three basic types of semiconductor materials: intrinsic semiconductors, extrinsic semiconductors, also known as impurity semiconductors. Both types of semiconductor materials can be supplied by PAM-XIAMEN.
1. What Is Intrinsic Semiconductor?
Intrinsic semiconductor refers to a pure semiconductor that is completely free of impurities and [...]
2022-06-20meta-author
PAM XIAMEN offers 60+1mm FZ Si Ingot -5
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-04-16meta-author
PAM XIAMEN offers Undoped Silicon Wafers.
Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Dia
Dopant
Ori
Res (Ohm-cm)
Thick (um)
Polish
Grade
Description
PAM3189
25.4mm
Undoped
<111>
>2000
280um
SSP
Test
Intrinsic FZ
PAM3190
25.4mm
Undoped
<100>
>5000
73.5um
DSP
Prime
FZ, Float Zone
PAM3191
50.8mm
Undoped
<100>
>10000
280um
DSP
Prime
FZ, Intrinsic item
PAM3192
50.8mm
Undoped
<100>
>10000
500um
SSP
Test
Float Zone, Undoped
PAM3193
76.2mm
Undoped
<100>
>5000 Ohm-cm
350um
DSP
MECH
NON-REFUNDABLE, POOR QUALITY. Sold “As-Is”; wafers are covered in streaks, residue, and particles.
PAM3194
100mm
Undoped
<100>
>20,000
500um
SSP
Prime
Intrinsic, Secondary flat SEMI, TTV<10 [...]
2019-02-14meta-author
Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). GaN cap layers with gradual increase in the doping concentration from 2 × 1016 to 5 × 1019 cm−3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT [...]
2019-11-07meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
76.2
N
Phos
CZ
-100
1-20
950-1050
P/E
PRIME
76.2
N
Phos
CZ
-100
1000-1050
P/E
PRIME
76.2
N
Phos
CZ
-100
1-20
1975-2025
P/E
PRIME
76.2
N
Phos
CZ
-100
1-20
2900-3100
P/E
PRIME
76.2
N
Phos
CZ
-100
1-50
2900-3100
P/E
PRIME
76.2
N
Phos
CZ
-100
1-20
5900-6100
P/E
PRIME
76.2
N
Phos
CZ
-100
10-60
9900-10100
P/E
PRIME
76.2
N
Phos
CZ
-111
300-350
P/P
PRIME
76.2
N
Phos
CZ
-111
350-400
P/E
PRIME
76.2
N
Phos
CZ
-111
1975-2025
P/P
PRIME
76.2
N
Phos
CZ
-111
1-20
2900-3100
P/E
PRIME
76.2
N
Phos
CZ
-111
1-20
4900-5100
P/E
PRIME
76.2
N
Phos
CZ
-111
1-20
5900-6100
P/E
PRIME
76.2
N
Phos
CZ
-111
1-20
11900-12100
P/E
PRIME
76.2
N
Phos
CZ
-110
300-350
P/P
PRIME
76.2
N
Phos
CZ
-110
350-400
P/E
PRIME
76.2
P
Boron
CZ
-100
1-20
43768
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
40-60
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
80-100
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
140-160
P/P
PRIME
76.2
P
Boron
FZ
-100
>3000
300-350
P/P
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
2019-03-04meta-author
High transparency AlN template on sapphire and silicon substrate are available from PAM-XIAMEN, which are suitable for making high-frequency BAW, SAW devices and power electronic. Aluminum nitride (AIN) template not only has the characteristics of AIN piezoelectric film, but also has the characteristics of higher sound propagation rate, [...]
2019-04-26meta-author