PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches | Cust class | Dopant | Type | Orientation | PFL length | PFL direction | SFL | Off orientation | Resistivity | Diameter | Thickness | Bow | TTV | Warp |
6 | SSP | Red Phos. | N+ | 100 | 47,5 ± 2,5 | 01T ± 0,50 | 0.0 ± 0.5° | 0.015 – 0.035 Ohmcm | 150 ± 0.5 mm | 400 ± 15 µm | 40 | 5 | 40 | |
6 | SSP | Red Phos. | N+ | 100 | 47,5 ± 2,5 | 01T ± 0,50 | 0.0 ± 0.5° | 0.015 – 0.035 Ohmcm | 150 ± 0.5 mm | 400 ± 15 µm | 40 | 5 | 40 | |
6 | SSP | Red Phos. | N+ | 100 | 47,5 ± 2,5 | 01T ± 0,50 | 0.0 ± 0.5° | 0.015 – 0.035 Ohmcm | 150 ± 0.5 mm | 350 ± 15 µm | 40 | 5 | 40 | |
6 | SSP | Red Phos. | N+ | 100 | 47,5 ± 2,5 | 01T ± 0,50 | 0.0 ± 0.5° | 0.015 – 0.035 Ohmcm | 150 ± 0.5 mm | 350 ± 15 µm | 40 | 5 | 40 | |
6 | SSP | Red Phos. | N+ | 100 | 47,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5° | 0.015 – 0.035 Ohmcm | 150 ± 0.5 mm | 525 ± 15 µm | 40 | 5 | 40 | |
6 | SSP | Red Phos. | N+ | 100 | 47,5 ± 2,5 | 01T ± 0,50 | 0.0 ± 0.5° | 0.015 – 0.035 Ohmcm | 150 ± 0.5 mm | 450 ± 15 µm | 40 | 5 | 40 | |
6 | SSP | Red Phos. | N+ | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 1.0 ° | <1.5 mOhmcm | 150.0 ± 0.2mm | 675 ± 10 µm | 60 | 10 | 60 | |
8 | DSP | Antimony | N+ | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 1° | 0.008 – 0.03 Ohmcm | 200 ± 0.2 mm | 725 ± 20 µm | 10 | 60 | ||
8 | DSP | Antimony | N+ | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 1° | 0.008 – 0.03 Ohmcm | 200 ± 0.2 mm | 725 ± 20 µm | 10 | 60 | ||
8 | DSP | Arsenic | N+ | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 0.2 ° | 0.001 – 0.005 Ohmcm | 200 ± 0.2 mm | 712.5 ± 12.5 µm | 60 | 8 | 75 | |
8 | DSP | Boron | P | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 1.0° | 8 – 12 Ohmcm | 200 ± 0.2 mm | 930 ± 10 µm | 5 | 60 | ||
8 | DSP | Boron | P+ | 100 | 0,0 ± 0,0 | 110 ± 0,50 | 0.0 ± 0.5° | 0.01 – 0.1 Ohmcm | 200 ± 0.2 mm | 600 ± 5 µm | 1 | |||
8 | DSP | Boron | P | 111 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 0.2° | 0.1 – 1 Ohmcm | 200 ± 0.2 mm | 1500 ± 25 µm | 65 | 10 | 75 | |
8 | DSP | Boron | P | 100 | 0,0 ± 0,0 | 011 ± 0,50 | 0.0 ± 0.5° | 9 – 18 Ohmcm | 200 ± 0.5 mm | 400 ± 5 µm | 40 | 1 | 40 | |
8 | DSP | Boron | P | 100 | 0,0 ± 0,0 | 110 ± 0,50 | 0.0 ± 0.2° | 6 – 36 Ohmcm | 200 ± 0.2 mm | 1000 ± 15 µm | 40 | 5 | 40 | |
8 | DSP | Boron | P | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 0.5° | 1 – 10 Ohmcm | 200 ± 0.2 mm | 650 ± 5 µm | 60 | 1 | 60 | |
8 | DSP | Boron | P+ | 100 | 0,0 ± 0,0 | 110 ± 0,50 | 0.0 ± 0.5° | 0.001 – 0.005 Ohmcm | 200 ± 0.5 mm | 500 ± 5 µm | 0,7 | |||
8 | DSP | Boron | P | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 1.0° | 1 – 5 Ohmcm | 200.0 ± 0.2mm | 770 ± 5 µm | 60 | 3 | 60 | |
8 | DSP | Boron | P+ | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 0.5° | 0.01 – 0.02 Ohmcm | 200 ± 0.2 mm | 1000 ± 10 µm | ||||
8 | DSP | Boron | P | 100 | 0,0 ± 0,0 | SSS ± 1 | 0.0 ± 0.5 ° | 10 – 15 Ohmcm | 200 ± 0.2 mm | 350 ± 5 µm | 60 | 3 | 60 | |
8 | DSP | Boron | P | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 0.2° | 1 – 10 Ohmcm | 200 ± 0.2 mm | 725 ± 5 µm | 40 | 7 | 50 | |
8 | DSP | Boron | P+ | 100 | 0,0 ± 0,0 | 110 ± 0,50 | 0.0 ± 0.5° | 0.01 – 0.02 Ohmcm | 200 ± 0.2 mm | 500 ± 5 µm | 60 | 3 | 60 | |
8 | DSP | Boron | P+ | 100 | 0,0 ± 0,0 | 110 ± 0,50 | 0.0 ± 0.5° | 0.01 – 0.02 Ohmcm | 200 ± 0.5 mm | 500 ± 5 µm | 0,7 | |||
8 | DSP | Boron | P+ | 100 | 0,0 ± 0,0 | 110 ± 0,50 | 0.0 ± 0.5° | 0.01 – 0.02 Ohmcm | 200 ± 0.5 mm | 600 ± 5 µm | 0,7 | |||
8 | DSP | Boron | P | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 0.5° | 11 – 20 Ohmcm | 200 ± 0.2 mm | 500 ± 15 µm | ||||
8 | DSP | Boron | P+ | 100 | 0,0 ± 0,0 | 110 ± 0,50 | 0.0 ± 0.2° | 0.01 – 0.02 Ohmcm | 200 ± 0.2 mm | 625 ± 5 µm | 60 | 2 | 60 | |
8 | DSP | Boron | P | 100 | 0,0 ± 0,0 | 110 ± 0,50 | 0.0 ± 0.5 ° | 10 ± 3 Ohmcm | 200 ± 0.2 mm | 725 ± 5 µm | 1 | 50 | ||
8 | DSP | Boron | P+ | 100 | 0,0 ± 0,0 | 110 ± 0,50 | 0.0 ± 0.2° | 0.01 – 0.02 Ohmcm | 200 ± 0.2 mm | 850 ± 5 µm | 60 | 2 | 60 | |
8 | DSP | Boron | P+ | 100 | 0,0 ± 0,0 | 110 ± 0,50 | 0.0 ± 1.0° | 0.01 – 0.02 Ohmcm | 200 ± 0.5 mm | 1000 ± 25 µm | ||||
8 | DSP | Boron | P+ | 100 | 0,0 ± 0,0 | 110 ± 0,50 | 0.0 ± 0.5° | 0.13 – 0.15 Ohmcm | 200 ± 0.5 mm | 725 ± 10 µm | 20 | 4 | ||
8 | DSP | Boron | P | 100 | 0,0 ± 0,0 | 110 ± 0,50 | 0.0 ± 0.5° | 1 – 30 Ohmcm | 200 ± 0.2 mm | 720 ± 5 µm | ||||
8 | DSP | Boron | P | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 1° | 1 – 2 Ohmcm | 200 ± 0.2 mm | 725 ± 20 µm | 10 | 60 | ||
8 | DSP | Boron | P | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 1° | 10 – 100 Ohmcm | 200 ± 0.2 mm | 550 ± 25 µm | 35 | 10 | 35 | |
8 | DSP | Boron | P+ | 100 | 0,0 ± 0,0 | 110 ± 0,50 | 0.0 ± 0.5° | 0.005 – 0.020 Ohmcm | 200 ± 0.2 mm | 710 ± 5 µm | ||||
8 | DSP | Boron | P | 100 | 0,0 ± 0,0 | 011 ± 1 | 0.0 ± 1.0° | 10 – 200 Ohmcm | 200 ± 0.2 mm | 1500 ± 25 µm | 4 | 60 | ||
8 | DSP | Boron | P | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 0.5° | 1 – 10 Ohmcm | 200 ± 0.2 mm | 650 ± 5 µm | 60 | 1 | 60 | |
8 | DSP | Boron | P | 100 | 0,0 ± 0,0 | 110 ± 0,20 | 0.0 ± 0.2° | 1 – 10 Ohmcm | 200 ± 0.2 mm | 400 ± 5 µm | 20 | 1 | 35 | |
8 | DSP | Boron | P | 100 | 0,0 ± 0,0 | 110 ± 0,20 | 0.0 ± 0.2° | 1 – 10 Ohmcm | 200 ± 0.2 mm | 650 ± 5 µm | 20 | 1 | 35 | |
8 | DSP | Boron | P | 100 | 0,0 ± 0,0 | 110 ± 0,50 | 0.0 ± 0.2° | 6 – 36 Ohmcm | 200 ± 0.2 mm | 1000 ± 15 µm | 40 | 5 | 40 | |
8 | DSP | Boron | P | 100 | 0,0 ± 0,0 | 110 ± 0,50 | 0.0 ± 0.5° | 5 – 40 Ohmcm | 200 ± 0.5 mm | 500 ± 5 µm | ||||
8 | DSP | Boron | P | 100 | 0,0 ± 0,0 | 110 ± 0,50 | 0.0 ± 0.5° | 1 – 30 Ohmcm | 200 ± 0.2 mm | 720 ± 5 µm | ||||
8 | DSP | Boron | P | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 0.20° | 1 – 10 Ohmcm | 200 ± 0.2 mm | 1000 ± 25 µm | 4 | 35 | ||
8 | DSP | Boron | P | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 0.2° | 1 – 10 Ohmcm | 200 ± 0.2 mm | 725 ± 5 µm | 40 | 7 | 50 | |
8 | DSP | Boron | P+ | 100 | 0,0 ± 0,0 | 110 ± 0,50 | 0.0 ± 0.5° | 0.010 – 0.020 Ohmcm | 200 ± 0.2 mm | 300 ± 5 µm | 60 | 3 | 60 | |
8 | DSP | Phosphorus | N | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 1.0 ° | 5 – 40 Ohmcm | 200 ± 0.2 mm | 440 ± 5 µm | 10 | 40 | ||
8 | DSP | Phosphorus | N | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 1.0° | 1 – 10 Ohmcm | 200 ± 0.2 mm | 725 ± 5 µm | 50 | 5 | 50 | |
8 | DSP | Phosphorus | N | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 0.5° | 1 – 10 Ohmcm | 200 ± 0.2 mm | 600 ± 10 µm | 2 | 50 | ||
8 | DSP | Phosphorus | N | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 1.0° | 2 – 20 Ohmcm | 200 ± 0.2 mm | 725 ± 15 µm | 40 | 3 | 30 | |
8 | DSP | Phosphorus | N | 100 | 0,0 ± 0,0 | 110 ± 1 | 0.0 ± 1° | 1 – 2 Ohmcm | 200 ± 0.2 mm | 725 ± 20 µm | 10 | 60 | ||
8 | DSP | Phosphorus | N | 100 | 0,0 ± 0,0 | 011 ± 1 | 0.0 ± 1.0 ° | 5 – 40 Ohmcm | 200 ± 0.2 mm | 440 ± 5 µm | 60 | 5 | 60 | |
8 | DSP | Phosphorus | N | 100 | 0,0 ± 0,0 | 011 ± 1 | 0.0 ± 1.0 ° | 5 – 40 Ohmcm | 200 ± 0.2 mm | 440 ± 5 µm | 60 | 5 | 60 |
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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
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