Search Results - sic

Enhancing the Fluorescence Brightness of Single SiC Spin Color Center

PAM-XIAMEN can supply SiC epitaxial wafers for color center research, more specifications you can find in https://www.powerwaywafer.com/sic-wafer/sic-epitaxy.html. Any questions, please contact the sales team: victorchan@powerwaywafer.com. The solid-state spin color center is an important system for quantum information processing, and its fluorescence brightness is an important parameter towards practical quantum applications. [...]

2024-04-30 Read more...

Research on the Structure and Physical Properties of AlN/Al2O3 Incoherent Interfaces

PAM-XIAMEN can supply AlN thin films, additional specifications please see https://www.powerwaywafer.com/2-inch-aluminum-nitride-aln-template-on-sapphire.html. 1. Research Background of Incoherent Interfaces Functional material interfaces have attracted much attention due to their often exhibiting novel physical and chemical phenomena and properties that differ from bulk materials. For example, two-dimensional electron gas, interface superconductivity, interface luminescence, and [...]

2024-04-29 Read more...

Progress in the TSSG Growth of Wafer Scale 3C-SiC Single Crystals

Single crystal 3C-SiC substrate can be supplied with specifications as: https://www.powerwaywafer.com/3c-sic-wafer.html. Silicon carbide (SiC) has excellent properties such as wide bandgap, high breakdown field strength, high saturation electron drift rate, and high thermal conductivity, and has important applications in fields such as new energy vehicles, photovoltaics, and 5G communication. Compared with [...]

2024-04-26 Read more...

Theoretical Study on Near Surface Vacancies in 3C-SiC

Silicon carbide (SiC) is a hot research material in the field of quantum information technology. For example, defect vacancies in SiC (composed of silicon vacancies and adjacent carbon vacancies, hereinafter referred to as VV) have many advantages of NV centers in diamond, including triple ground states and the advantage [...]

2024-04-23 Read more...

Study on A General Method for Polishing SiC Wafers to Atomic Level Flatness

Silicon carbide (SiC) is crucial for the growth of graphene as a substrate material for epitaxial graphene. PAM-XIAMEN can offer SiC substrate for graphene growth, specification as https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html. Graphene grown on different crystal planes of SiC has different electronic properties. Therefore, selecting SiC substrates with different crystal planes to grow [...]

2024-04-22 Read more...

Research on Compensation Effect in Al Doped P-Type 4H-SiC By PVT

PAM-XIAMEN is able to supply you with P type SiC substrate, more specifications please see: https://www.powerwaywafer.com/p-type-silicon-carbide-substrate-and-igbt-devices.html. SiC single crystal has the characteristics of wide bandgap, high critical breakdown electric field, high thermal conductivity, high carrier saturation drift speed, and good stability. Among the numerous crystal forms of SiC, 4H-SiC has [...]

2024-04-19 Read more...

4H-SiC PVT Growth: Achieving Crystal Structure Growth Stability

PAM-XIAMEN can supply you with 4H-SiC wafers fitting your demands, specifications as found in https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html. The control of a single crystal form during the growth process of SiC crystals is a complex problem, involving the selection of multiple growth parameters and the optimization of temperature field structure, and the parameters are [...]

2024-04-17 Read more...

Reducing Surface Pits of 4H-SiC Epiwafer

PAM-XIAMEN can supply SiC epitaxial wafers, more wafer specifications please read: https://www.powerwaywafer.com/sic-wafer/sic-epitaxy.html. Although SiC epitaxial wafers exhibit excellent characteristics in high-voltage and high current devices, there are still several types of defects that have a negative impact on the electrical performance of SiC devices. Among them, surface pits have an impact [...]

2024-04-11 Read more...

4H-SiC Subsurface Damage

Semiconductor silicon carbide (4H SiC) has excellent properties such as wide bandgap, high breakdown field strength, high electron mobility, high thermal conductivity, and good chemical stability. It has demonstrated important application potential in fields such as power electronics, radio frequency microwave, and quantum information. The 4H-SiC substrate is the [...]

2024-04-09 Read more...

Influence of Seed Crystal on SiC Crystal Growth

PAM-XIAMEN can supply SiC seed crystal for single crystal growth, specific parameters can be found in: https://www.powerwaywafer.com/sic-seed-crystal.html Seed crystals have a significant influence on the initial nucleation of crystals. The surface morphology of the crystal nucleation stage can to some extent reflect the rich information of crystal growth mechanism and crystal defect distribution, and [...]

2024-04-08 Read more...