PAM XIAMEN offers Silicon Ingots.
Material Description
3″Ø×174mm p-type Si:Ga[100] (1.77-2.13)Ωcm, Ingot “As-Grown”, (82-85)mmØ, RRV=8%, Oxygen=6.2E17/cc
4″Ø×(504+504+523+147+144)mm, p-type Si:B[111], As-Grown, made by Crysteco (5 ing 6c, 10b(Gnd 1F), 14a(Gnd 1F), 21Aa, 30d(Gnd 1F))
3″Ø ingot p-type Si:B[111] ±0.5°, Ro: 1-10 Ohmcm, As-Grown, (3 ingots: 217mm, 32mm, 169mm)
3″Ø×36mm ingot, p-type Si:B[211]±2°, [...]
2019-03-08meta-author
PAM XIAMEN offers Single Crystals, Wafers and Crystal Substrates.
PAM XIAMEN provides both standard and customized high quality single crystals, wafers and substrates for a wide range of applications such as LED, ferroelectric, piezoelectric, electro-optical, photonics, high power electronics, and high frequency power devices, just to name [...]
2019-03-12meta-author
PAM XIAMEN offers Nd YAG Nd Doped Yttrium Aluminium Garnet Laser Crystal.
Main Specifications
dimensional tolerance：
Dia：< +/-0.025 mm ,length: < +/-0.5 mm
flatness：
λ/8 @633nm
Surface fineness：
10/5
flatness：
20 arc sec.
verticality：
5 arc min
orientation：
<111> crystalline direction,< +/-0.5°
coating film：
AR coating, HR Coating
reflect：
R<0.2%@1064, HR:R>99.8%@1064,R<5%@808nm,
clear aperture：
>95% central area
wavefront distortion：
<7mm diameter : <λ/8 per inch @ 633nm,
7mm diameter : <λ/10per inch @ 633nm
Publications related to YAG laser crystals:
[1]
J. E. Geusic et al., “Laser oscillations in Nd-doped yttrium aluminum, yttrium gallium and gadolinium garnets”, Appl. Phys. Lett. 4 (10), 182 (1964)
[2]
D. Y. Shen et al., “Highly efficient in-band pumped Er:YAG laser [...]
2019-03-15meta-author
Size and distribution of Te inclusions in detector-grade CdZnTe ingots
To observe the Te inclusions distribution along the axial direction of CdZnTe ingots, batches of as-grown detector-grade CdZnTe crystals grown by vertical Bridgman method, were investigated using IR transmission imaging. However, there is not a [...]
(20-21) Plane Si-GaN Freestanding GaN Substrate
PAM-XIAMEN offers (20-21) Plane Si-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(20-21)-SI
Dimension
5 x 10 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
> 106 Ω.cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
Electrical properties of n-GaAs epilayers, FET and HEMT structures grown on LT-GaAs by MBE
We have investigated the dependence of the conductive layer width and Hall mobility in n-GaAs/LT-GaAs structures on the conditions of low temperature (LT) buffer growth and on annealing parameters. Both the [...]
