

PAM XIAMEN offers prime grade silicon wafers for research and production. We have ultra-thin silicon 5 micron thin to silicon wafer pucks 10mm thick. All orientation and resistivities, both highly doped and low doped specifications. What are Silicon Wafer Grades? Silicon wafers are available in different [...]
PAM-XIAMEN can offer InAlN HEMT( Indium Aluminium Nitride High Electron Mobility Transistor) structure on 8-inch silicon. InAlN band gap is a direct band gap, and InAlN HEMT is used in producing electronic and photonic devices. It is one of the III-V group of semiconductors. As an alloy of indium nitride [...]
PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [111] 3″ 300 P/P 0.3-0.4 SEMI Prime p-type Si:B [111] 3″ 250 P/E 0.10-0.12 SEMI Prime p-type Si:B [111] 3″ 300 P/E 0.03-0.04 SEMI Prime p-type Si:B [111] 3″ 380 P/E 0.014-0.015 SEMI Prime p-type Si:B [111-1°] 3″ 1000 P/E 0.014-0.016 SEMI Prime p-type Si:B [111] 3″ 600 P/P 0.005-0.020 SEMI Prime p-type Si:B [111-3.5°] 3″ 380 P/E 0.004-0.005 SEMI Prime n-type Si:P [510] 3″ 1000 P/E/P 5-10 Prime, NO Flatst n-type Si:P [100] 3″ 9500 P/E 15-22 SEMI Prime, Individual cst n-type Si:P [100] 3″ 300 P/E 10-20 SEMI Prime n-type Si:P [100] 3″ 380 P/E 10-20 SEMI Prime n-type Si:P [100] 3″ 3000 P/E/P 10-12 Prime, NO Flats, Individual cst n-type Si:P [100] 3″ 1000 P/E 6-10 Prime, NO Flatst n-type Si:P [100] 3″ 1500 P/E 5-7 SEMI Prime n-type Si:P [100] 3″ 300 P/P 1-20 SEMI Prime n-type Si:P [100] 3″ 345 P/P 1-100 SEMI n-type Si:P [100] 3″ 350 P/P 1-25 SEMI Prime, TTV<1μm, Empak cst n-type [...]
Effects of sample processing on the performance of CdZnTe crystals Due to the outstanding properties of CdZnTe materials, CdZnTe detectors have been the research focus for X- and gamma ray applications for many years. For CdZnTe detector fabrication heat treatments are often desirable. In order to provide detailed information of the CdZnTe crystal [...]
The technical potential of room temperature bonding of wafers in vacuum using amorphous Si (a-Si) and Ge (a-Ge) films was studied. Transmission electron microscopy images revealed no interface corresponding to the original films surfaces for bonded a–Ge–a–Ge films. Analyses of film structure and the [...]
PAM XIAMEN offers 3″ Prime Silicon Wafer Thickness 375um. Si wafers dia= 75mm, thickness= 375 um orientation (100), doping Borum (B), Double dide polishing ( epi-polished) p-type, resistance 0,001 Ohm/cm= 25 pcs p-type, resistance 12 Ohm/cm= 25 pcs p-type, resistance 10 000 Ohm/cm= 25 [...]