

PAM XIAMEN offers Silicon Ingots. Material Description 3″Ø×174mm p-type Si:Ga[100] (1.77-2.13)Ωcm, Ingot “As-Grown”, (82-85)mmØ, RRV=8%, Oxygen=6.2E17/cc 4″Ø×(504+504+523+147+144)mm, p-type Si:B[111], As-Grown, made by Crysteco (5 ing 6c, 10b(Gnd 1F), 14a(Gnd 1F), 21Aa, 30d(Gnd 1F)) 3″Ø ingot p-type Si:B[111] ±0.5°, Ro: 1-10 Ohmcm, As-Grown, (3 ingots: 217mm, 32mm, 169mm) 3″Ø×36mm ingot, p-type Si:B[211]±2°, [...]
PAM XIAMEN offers Single Crystals, Wafers and Crystal Substrates. PAM XIAMEN provides both standard and customized high quality single crystals, wafers and substrates for a wide range of applications such as LED, ferroelectric, piezoelectric, electro-optical, photonics, high power electronics, and high frequency power devices, just to name [...]
PAM XIAMEN offers Nd YAG Nd Doped Yttrium Aluminium Garnet Laser Crystal. Main Specifications dimensional tolerance: Dia:< +/-0.025 mm ,length: < +/-0.5 mm flatness: λ/8 @633nm Surface fineness: 10/5 flatness: 20 arc sec. verticality: 5 arc min orientation: <111> crystalline direction,< +/-0.5° coating film: AR coating, HR Coating reflect: R<0.2%@1064, HR:R>99.8%@1064,R<5%@808nm, clear aperture: >95% central area wavefront distortion: <7mm diameter : <λ/8 per inch @ 633nm, 7mm diameter : <λ/10per inch @ 633nm Publications related to YAG laser crystals: [1] J. E. Geusic et al., “Laser oscillations in Nd-doped yttrium aluminum, yttrium gallium and gadolinium garnets”, Appl. Phys. Lett. 4 (10), 182 (1964) [2] D. Y. Shen et al., “Highly efficient in-band pumped Er:YAG laser [...]
Size and distribution of Te inclusions in detector-grade CdZnTe ingots To observe the Te inclusions distribution along the axial direction of CdZnTe ingots, batches of as-grown detector-grade CdZnTe crystals grown by vertical Bridgman method, were investigated using IR transmission imaging. However, there is not a [...]
(20-21) Plane Si-GaN Freestanding GaN Substrate PAM-XIAMEN offers (20-21) Plane Si-GaN Freestanding GaN Substrate Item PAM-FS-GAN(20-21)-SI Dimension 5 x 10 mm2 Thickness 380+/-50um Orientation (20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5° (20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2° Conduction Type Semi-Insulating Resistivity (300K) > 106 Ω.cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤5 x 106 cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
Electrical properties of n-GaAs epilayers, FET and HEMT structures grown on LT-GaAs by MBE We have investigated the dependence of the conductive layer width and Hall mobility in n-GaAs/LT-GaAs structures on the conditions of low temperature (LT) buffer growth and on annealing parameters. Both the [...]