PAM XIAMEN offers LiF Lithium Fluoride Crystal.
LiF crystal has excellent VUV region transmittance. It is used for windows, prisms, and lenses in the visible and infrared in 0.104 μm – 7 μm. LiF crystal is sensitive to thermal shock and would be attacked by [...]
2019-03-14meta-author
PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade.
Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
2019-05-20meta-author
PAM XIAMEN offers 1″Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Dia
Type
Dopant
Orien
Res (Ohm-cm)
Thick (um)
Polish
Description
PAM2266
25.4mm
P
B
<111>
>1000
20000um
DSP
FZ
PAM2267
25.4mm
P
B
<100>
ANY
400um
SSP
Thickness is: 400+/-100um.
PAM2268
25.4mm
ANY
<100>
500um
SSP
Wafers have particles. Wafers sold “As-Is”.
PAM2269
25.4mm
Undoped
Undoped
<111>
>2000
280um
SSP
Intrinsic FZ
PAM2270
25.4mm
Undoped
Undoped
<100>
>5000
73.5um
DSP
FZ, Float Zone
PAM2271
25.4mm
P
B
<100>
.01-.05
500um
DSP
NO flats, COMPLETELY round. Minimum Order Quantity 5 wafers.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2271
p-type Si:B
[100]
1″
280um
P/E
0-100 ohm-cm
SEMI, 1Flat, Soft cst
PAM2272
Intrinsic Si:-
[111]
1″
280um
P/E
FZ [...]
2019-02-19meta-author
Calcium fluoride crystal thin film of PAM-XIAMEN is provided with high band gap, high dielectric constant and high dielectric strength, which is an ideal dielectric material for preventing leakage current effectively. CaF2 is calcium fluoride chemical formula. The evaporation temperature of CaF2 in a [...]
2019-04-17meta-author
PAM XIAMEN offers 4″CZ Prime Silicon wafer-14
Silicon wafer
dia 4 inch
thickness 500 um
P type boron doped or N doped
resistivity 1-10 ohm cm
orientation 100
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-12meta-author
PAM XIAMEN offers 4″ Prime CZ Si wafer with one side sputtering Cr/Au layer thickness 10/50nm
4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm),
thickness = 100 ± 25 µm,
orientation (100)(+/-0.5°),
2-side polished,
p or n type (no matter) ,
resistivity ? Ohm cm (no matter),
Particle: 0.33µm, <qty30
ttv ≤ 10um,warp ≤30um
One side sputtering Cr/Au Layer with the thickness 10nm/50nm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-16meta-author