GaAs(111) crystal wafer
PAM XIAMEN offers n type/Si doped, undoped, and p type GaAs(111) crystal wafer:
1.Wafer List
GaAs ,Growing Method: VGF (111)A , SI, undoped, 2″ dia x 0.5 mm, 1 sp
GaAs ,Growing Method: VGF (111)A , SI, undoped, 4″ dia x 0.55 mm, 1 sp
GaAs ,Growing Method: VGF (111)A , SI, undoped, 4″ dia x 0.55 mm, 2sp
GaAs ,Growing Method: VGF (111)B , SI, undoped, 4″ dia x 0.625 mm, 1 sp
GaAs ,Growing Method: VGF (111)B , SI, undoped, 4″ dia x 0.625 mm, 2sp
GaAs ,Growing Method: VGF (111)B , Si-doped, 2″ dia x 0.325mm, 1sp
GaAs ,Growing Method: VGF (111)B , Si-doped, 2″ dia x 0.35mm, 2sp
GaAs ,Growing Method: VGF (111)B , Si-doped, 3″ dia x 0.625 mm, 2sp
GaAs (111) orientation, P-type, Zn-doped, 2″ dia x 0.4mm, 1sp,
GaAs (111)A orientation, Semi-Insulating, undoped, 10x10x 0.55mm, 1sp,
GaAs (111)A orientation, Semi-Insulating, undoped, 10x10x 0.5mm, 1sp
GaAs (111)A orientation, Semi-Insulating, undoped, 5x5x 0.5-0.55mm, 1sp,
GaAs (111)B orientation, Semi-Insulating, undoped, 10x10x 0.625mm, 1sp,
GaAs (111)B orientation, Semi-Insulating, undoped, 5X5x 0.625mm, 1sp
GaAs, Growing Method: VGF ,(111)A , Zn-doped, P-type, 2″ dia x 0.5mm, 2sp
GaAs, Growing Method: VGF ,(111)B , Zn-doped, P-type, 2″ dia x 0.4 mm, 2sp
2.(111)GaAs Wafer Specification:
2-1 2″GaAs:350 μm, Resistivity >1E7Ohm.cm , Orientation: <111>, single side polished, Undoped
Specifications
Parameter | Customer’s Requirements | Guaranteed / Actual Values | UOM |
Dopant | GaAs-Undoped | GaAs-Undoped | |
Diameter | 50.7±0.1 | 50.7±0.1 | mm |
Orientation | <111>±0.5° | <111>±0.5° | — |
OF Orientation | EJ[0-1-1]±0.5° | EJ[0-1-1]±0.5° | — |
OF Length | 17±1 | 17±1 | mm |
IF Orientation | EJ[0-11]±0.5° | EJ[0-11]±0.5° | — |
IF Length | 7±1 | 7±1 | mm |
Resistivity | >1E7 | >1E7 | ohm.cm |
EPD(Ave) | ≤5000 | ≤5000 | /cm2 |
Thickness | 325~375 | 325~375 | um |
TTV | N/A | N/A | um |
TIR | N/A | N/A | um |
Bow | N/A | N/A | um |
Warp | N/A | N/A | um |
Surface | P-E | P-E | — |
Packaging | Single Wafer | Single Wafer | — |
2-2 2″GaAs:350 μm, (range,1-9E-3)Ohm.cm, Orientation: <111>, single side polished,Si doped N-type
Specifications
Parameter | Customer’s Requirements | Guaranteed / Actual Values | UOM |
Dopant | GaAs-Si | GaAs-Si | — |
Diameter | 50.8±0.2 | 50.8±0.2 | mm |
Orientation | <111>±0.5° | <111>±0.5° | — |
OF Orientation | EJ[0-11]±0.5° | EJ[0-11]±0.5° | — |
OF Length | 17±1 | 17±1 | mm |
IF Orientation | EJ[-211]±0.5° | EJ[-211]±0.5° | — |
IF Length | 7±1 | 7±1 | mm |
Resistivity | (1-9)E-3 | (1-9)E-3 | ohm.cm |
EPD(Ave) | <5000 | <5000 | /cm2 |
Thickness | 325~375 | 325~375 | um |
TTV | <10 | <10 | um |
TIR | <10 | <10 | um |
Bow | <15 | <15 | um |
Warp | <15 | <15 | um |
Surface | P-E | P-E | — |
Packaging | Single Wafer | Single Wafer | — |
2-3 2″GaAs:350 μm ; (range,1-9E-3)Ohm.cm ; Orientation: <111>; single side polished;Zn-doped P-type
Specifications
Parameter | Customer’s Requirements | Guaranteed / Actual Values | UOM |
Dopant | GaAs-Zn | GaAs-Zn | — |
Diameter | 50.8±0.2 | 50.8±0.2 | mm |
Orientation | <111>±0.5° | <111>±0.5° | — |
OF Orientation | EJ[0-11]±0.5° | EJ[0-11]±0.5° | — |
OF Length | 17±1 | 17±1 | mm |
IF Orientation | EJ[-211]±0.5° | EJ[-211]±0.5° | — |
IF Length | 7±1 | 7±1 | mm |
Resistivity | (1-9)E-3 | (1-9)E-3 | ohm.cm |
EPD(Ave) | <5000 | <5000 | /cm2 |
Thickness | 325~375 | 325~375 | um |
TTV | <10 | <10 | um |
TIR | <10 | <10 | um |
Bow | <15 | <15 | um |
Warp | <15 | <15 | um |
Surface | P-E | P-E | — |
Packaging | Single Wafer | Single Wafer | — |
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com