Highlights
•Novel growth strategy of GaAs on Si(1 0 0) with AlAs/GaAs strain layer superlattice.
•Emphasis on understanding the inconclusive crystalline morphology at initial layers.
•Observed low TD in HRTEM and low RMS in AFM.
•Observed fourth order of superlattice peaks in ω–2θ scan in HRXRD.
•SAEDP shows fcc [...]
PAM-XIAMEN offers R-Plane(1-102) Sapphire Substrate, single side polished,please see below spec:
2”,R-Plane Sapphire Substrate with SSP
No
Item
Specification
1
Material
High Purity Al2O3
2
Diameter
50.8土0.1mm
3
Orientation
R-plane<1-102>土0.2°
4
Thickness
430土15um
5
TTV
≤15um
6
Bow
≤10um
7
Warp
≤15um
8
Primary Flat Length
16.0土1.0mm
9
Front suface Roughmess(Ra)
Ra≤0.3nm
10
Bock Surtace Roughness(Ra)
0.8~1.2um
11
Primary Flat Orienation
A-plane+0.2°
12
Surtace onentation
R-Plane土0.2°
13
Laser Mark
back side or front side or no laser mark
14
Package
25pcsCassede.Vacum-sealed,Nitrogen-flled,Class-100 Cleanroom
3”,R-Plane Sapphire Substrate with SSP
No
ltem
Specification
1
Material
High Purity Al2O3
2
Diameter
76.2土0.2mm
3
Thickness
350土25um
4
Orientation
R-plane<1-102>土0.2°
5
Primary Flat Orientation
45+2CCCW [...]
2020-05-21meta-author
PAM XIAMEN offers YIG single crystal substrate.
YIG single crystal substrate, one side polished, (111), 5 mm dia. x 0.5 mm
YIG single crystal substrate, two sides polished, (111), 5 mm dia. x 0.35 mm
Due to the rapid changes in the semiconductor wafer [...]
2019-05-21meta-author
PAM XIAMEN offers 6″ CZ Silicon Wafer
N Type/Arsenic doped
Orientation (100)
Thickness 625±15μm
Resistivity 0.002-0.004Ωcm
Flat one 47.5 ± 2.5, <110> ±1°
TTV≤10μm
TIR ≤5μm
STIR≤2μm (15mm*15mm)
Bow/Warp≤30μm
Front Side: Chemical Mechanical
Polished
Back side:
BSD Yes
Poly(Å) No
Oxide Back Seal(Å)5000±500 Å
Edge Oxide Strip(mm):0.8
Back side Laser Mark: No
Particle ≤10 @≥0.3㎛
METAL IMPURITIES:
≤ 2.5E10(Fe Cr Cu Ni)at/㎠
≤ 5E10(Al Zn [...]
2021-03-18meta-author
GaN epi layers are usually grown by MOCVD on various substrates, such as sapphire, Si and SiC substrate. The choice of substrate varies according to the needs of the applications. So for RF MOSFET (Metal Oxide Semiconductor Field Effect Transistor) application, SiC substrate, which [...]
2022-03-21meta-author
Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) offers InSb crystal wafer up to 2″ in diameter that are grown by a modified Czochralski method from highly purified, zone refined polycrystalline ingots. More about the indium antimonide crystal substrate specifications, please see the following part:
1. Indium Antimonide [...]