SPCW is a counting module based on CZT detector. It integrates CZT detector, high gain charge sensitive amplifier and SK shaping circuit. The radiation dose rates ranges from 0.1μGy/h~1Gy/h will be its guest.
1. Specification of SPCW Wide Range Radiation Doses Module
Energy range
30KeV~1.5MeV (standard) / [...]
2019-04-23meta-author
Single-emitter LD Chip 1470nm @3W
PAM200914-LD-CHIP-1470nm
Brand: PAM-XIAMEN
Wavelength: 1470nm
Stripe width: 96um
Output Power: 3W
Cavity Length:2mm
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2019-05-09meta-author
What is GaAs?
GaAs(Gallium arsenide) is a compound semiconductor material,a mixture of two elements, gallium (Ga) and arsenic (As). The uses of Gallium arsenide are varied and include being used in LED/LD, field-effect transistors (FETs), and integrated circuits (ICs).
GaAs Basic Parameters at 300K
Crystal structure
Zinc Blende
Group of [...]
2012-05-14meta-author
PAM XIAMEN offers 8″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
8″
725
P/E
FZ 2,000-6,000 {2,500-3,700}
SEMI notch Prime, TTV<6μm, Bow<15μm, Warp<40μm
p-type Si:B
[100]
8″
725
P/E
8-12
SEMI notch Prime, TTV<4µm
p-type Si:B
[100]
8″
725
P/E
MCZ 0.1-100.0
TEST grade, SEMI notch,TTV<4µm
p-type Si:B
[100]
8″
725
P/E
MCZ 0.005-0.010
Prime, SEMI notch,TTV<4µm
n-type Si:P
[100]
8″
725
P/P
1-2
SEMI notch Prime, Up to 200 wafers available
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in [...]
2019-03-04meta-author
PAM XIAMEN offers SBN crystal.
Strontium-Barium Niobate (SrxBa(1-x)Nb2O6) SBN crystal is an excellent optical and photorefractive material due to its excellent photorefractive, electro-optic, nonlinear optic, and dielectric properties. SBN crystal has a very large electro-optic coefficient up to 1400 pm/V. and is potential crystal [...]
2019-05-15meta-author
PAM XIAMEN offers4″ CZ Prime Silicon Wafer Thickness = 200 ± 25 µm-3
4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = 200 ± 25 µm,
orientation (100)(+/-0.5°),
2-side polished,
p or n type (no matter) ,
? Ohm cm (no matter),
Particle: 0.33µm, <qty30
ttv ≤ 10um,warp ≤30um
One [...]
2019-09-20meta-author